Gary G. DeLeo
Affiliations: | Physics | Lehigh University, Bethlehem, PA, United States |
Area:
Astrophysics Physics, Astronomy and AstrophysicsGoogle:
"Gary DeLeo"Mean distance: (not calculated yet)
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Publications
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Tupa PR, Deleo GG, McCluskey GE, et al. (2013) Ultraviolet spectroscopic analysis of transient mass flow outburst in U cephei Astrophysical Journal. 775 |
Boucher DE, Gál ZA, DeLeo GG, et al. (1997) Simulation of Vacancy Pairs in GaN Using Tight-Binding Molecular Dynamics Mrs Proceedings. 482: 941 |
DeLeo GG. (1991) Theory of hydrogen-impurity complexes in semiconductors Physica B-Condensed Matter. 170: 295-304 |
Dutt DA, Feigl FJ, DeLeo GG. (1990) Optical absorption and electron paramagnetic resonance studies of chemically reduced congruent lithium niobate Journal of Physics and Chemistry of Solids. 51: 407-415 |
Fowler WB, DeLeo GG, Dorogi MJ. (1989) Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon Materials Science Forum. 985-990 |
DeLeo GG, Dorogi MJ, Fowler WB. (1988) Bond-centered interstitial hydrogen in silicon: Semiempirical electronic-structure calculations. Physical Review. B, Condensed Matter. 38: 7520-7529 |
DeLeo GG, Fowler WB, Barry GW, et al. (1986) Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods Materials Science Forum. 31-36 |
Montgomery SL, Deleo GG. (1984) Electronic structures of third-period interstitials in silicon Physical Review B. 30: 771-774 |
DeLeo GG, Fowler WB, Watkins GD. (1984) Theory of off-center impurities in silicon: Substitutional nitrogen and oxygen Physical Review B. 29: 3193-3207 |
DeLeo GG, Fowler WB, Watkins GD. (1984) Electronic structure of hydrogen- and alkali-metal-vacancy complexes in silicon Physical Review B. 29: 1819-1823 |