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Change Weng, Ph.D.

Affiliations: 
2010 Arizona State University, Tempe, AZ, United States 
Area:
Inorganic Chemistry
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John Kouvetakis grad student 2010 Arizona State
 (Group IV semiconductors and dielectrics: A combined experimental and simulation study.)

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Chen LC, Weng CY. (2015) Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications. Nanoscale Research Letters. 10: 404
Weng C, Kouvetakis J, Chizmeshya AV. (2011) A novel predictive model for formation enthalpies of Si and Ge hydrides with propane- and butane-like structures. Journal of Computational Chemistry. 32: 835-53
Roucka R, Mathews J, Weng C, et al. (2011) High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon Ieee Journal of Quantum Electronics. 47: 213-222
Beeler R, Weng C, Tolle J, et al. (2010) Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy Ecs Transactions. 33: 941-950
Mathews J, Roucka R, Weng C, et al. (2010) Near IR photodiodes with tunable absorption edge based on Ge 1-ySny alloys integrated on silicon Ecs Transactions. 33: 765-773
Weng C, Kouvetakis J, Chizmeshya AVG. (2010) Si-Ge-based oxynitrides: From molecules to solids Chemistry of Materials. 22: 3884-3899
Beeler R, Mathews J, Weng C, et al. (2010) Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications Solar Energy Materials and Solar Cells. 94: 2362-2370
Weng C, Kouvetakis J, Chizmeshya AVG. (2010) ChemInform Abstract: Si-Ge-Based Oxynitrides: From Molecules to Solids Cheminform. 41: no-no
Tice JB, Weng C, Tolle J, et al. (2009) Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics. Dalton Transactions (Cambridge, England : 2003). 6773-82
Xie J, Tolle J, D'Costa VR, et al. (2009) Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties Solid-State Electronics. 53: 816-823
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