Richard Beeler, Ph.D.
Affiliations: | 2012 | Chemistry | Arizona State University, Tempe, AZ, United States |
Area:
Materials Science Engineering, Inorganic Chemistry, Condensed Matter PhysicsGoogle:
"Richard Beeler"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| John Kouvetakis | grad student | 2012 | Arizona State | |
| (Epitaxial Development of Advanced Group IV Materials and High Performance Optical Devices for Applications in Silicon-photonics and Photovoltaics.) | ||||
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Publications
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| Claflin B, Kiefer AM, Beeler RT, et al. (2014) Characterization of Ge1-x-ySixSny ternary alloys - Comparison of UHV-CVD and gas source MBE growth Ecs Transactions. 64: 801-810 |
| Harris TR, Yeo YK, Ryu MY, et al. (2014) Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn) Journal of Applied Physics. 116 |
| Xu C, Beeler RT, Jiang L, et al. (2014) Synthesis and optical properties of Sn-rich Ge1-X -ySi xSny materials and devices Thin Solid Films. 557: 177-182 |
| Harris TR, Ryu MY, Yeo YK, et al. (2014) Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates Current Applied Physics. 14: S123-S128 |
| Sims PE, Chizmeshya AV, Jiang L, et al. (2013) Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties. Journal of the American Chemical Society. 135: 12388-99 |
| Beeler RT, Gallagher J, Xu C, et al. (2013) Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices Ecs Journal of Solid State Science and Technology. 2 |
| Jiang L, Sims PE, Grzybowski G, et al. (2013) Nanoscale assembly of silicon-like [Al(As1-xNx)] ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties Physical Review B - Condensed Matter and Materials Physics. 88 |
| Xu C, Beeler RT, Jiang L, et al. (2013) New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case Semiconductor Science and Technology. 28 |
| Ryu MY, Harris TR, Yeo YK, et al. (2013) Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content Applied Physics Letters. 102 |
| Xu C, Beeler RT, Grzybowski GJ, et al. (2012) Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn. Journal of the American Chemical Society. 134: 20756-67 |