James A. Fellows, Ph.D.

Affiliations: 
2001 Air Force Institute of Technology 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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"James Fellows"
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Yung K. Yeo grad student 2001 Air Force Institute of Technology
 (Electrical activation studies of ion implanted gallium nitride.)
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Fellows JA, Yeo YK, Ryu MY, et al. (2005) Optical study of implantation damage recovery from Si-implanted GaN Solid State Communications. 133: 213-217
Fellows JA, Yeo YK, Ryu MYI, et al. (2005) Electrical and optical activation studies of Si-implanted GaN Journal of Electronic Materials. 34: 1157-1164
Ryu MY, Chitwood EA, Claunch EN, et al. (2003) Annealing studies of Si-implanted Al0.25Ga0.75N Physica Status Solidi C: Conferences. 2593-2596
Fellows JA, Yeo YK, Ryu MY, et al. (2003) Annealing studies of Si-implanted GaN by Hall-effect and photoluminescence measurements Institute of Physics Conference Series. 174: 49-52
Fellows JA, Yeo YK, Hengehold RL, et al. (2002) Electrical activation studies of GaN implanted with Si from low to high dose Applied Physics Letters. 80: 1930-1932
Fellows JA, Yeo YK, Hengehold RL, et al. (2002) Electrical and optical studies of Si-implanted GaN Materials Research Society Symposium - Proceedings. 693: 407-412
Fellows JA, Yung KY, Hengehold RL, et al. (2001) Optical characterization of Mg- And Si-implanted GaN Materials Research Society Symposium Proceedings. 680: 208-213
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