James A. Fellows, Ph.D.
|2001||Air Force Institute of Technology|
Area:Materials Science Engineering, Electronics and Electrical Engineering
Mean distance: (not calculated yet)
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|Fellows JA, Yeo YK, Ryu MY, et al. (2005) Optical study of implantation damage recovery from Si-implanted GaN Solid State Communications. 133: 213-217|
|Fellows JA, Yeo YK, Ryu MYI, et al. (2005) Electrical and optical activation studies of Si-implanted GaN Journal of Electronic Materials. 34: 1157-1164|
|Ryu MY, Chitwood EA, Claunch EN, et al. (2003) Annealing studies of Si-implanted Al0.25Ga0.75N Physica Status Solidi C: Conferences. 2593-2596|
|Fellows JA, Yeo YK, Ryu MY, et al. (2003) Annealing studies of Si-implanted GaN by Hall-effect and photoluminescence measurements Institute of Physics Conference Series. 174: 49-52|
|Fellows JA, Yeo YK, Hengehold RL, et al. (2002) Electrical activation studies of GaN implanted with Si from low to high dose Applied Physics Letters. 80: 1930-1932|
|Fellows JA, Yeo YK, Hengehold RL, et al. (2002) Electrical and optical studies of Si-implanted GaN Materials Research Society Symposium - Proceedings. 693: 407-412|
|Fellows JA, Yung KY, Hengehold RL, et al. (2001) Optical characterization of Mg- And Si-implanted GaN Materials Research Society Symposium Proceedings. 680: 208-213|