Raymond T. Tung
Affiliations: | Physics | City University of New York, New York, NY, United States |
Area:
Atomic Physics, Materials Science EngineeringGoogle:
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Publications
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Cheng CP, Chen WS, Lin KY, et al. (2017) Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2 × 4 interface: An in-situ synchrotron radiation photoemission study Applied Surface Science. 393: 294-298 |
Tung RT, Kronik L. (2016) Band offset formation at semiconductor heterojunctions through density-based minimization of interface energy Physical Review B. 94: 75310 |
Tung RT. (2014) The physics and chemistry of the Schottky barrier height Applied Physics Reviews. 1 |
Long W, Li Y, Tung RT. (2014) Schottky barrier height systematics studied by partisan interlayer Thin Solid Films. 557: 254-257 |
Long W, Li Y, Tung RT. (2013) Modification of Schottky barrier height on Si (111) by Ga-termination Surface Science. 610: 48-52 |
Li Y, Long W, Tung RT. (2013) Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces Applied Surface Science. 284: 720-725 |
Li Y, Long W, Tung RT. (2012) Inhomogeneous ohmic contacts: Barrier height and contact area determination Applied Physics Letters. 101 |
Li Y, Long W, Tung RT. (2011) Controlled modification of Schottky barrier height by partisan interlayer Solid State Communications. 151: 1641-1644 |
Puniredd SR, Platzman I, Tung RT, et al. (2010) Bidirectional control of silicon's surface potential by means of molecular coverage Journal of Physical Chemistry C. 114: 18674-18678 |
Bashouti MY, Tung RT, Haick H. (2009) Tuning the electrical properties of Si nanowire field-effect transistors by molecular engineering. Small (Weinheim An Der Bergstrasse, Germany). 5: 2761-9 |