Michael Kozicki

Affiliations: 
Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering
Website:
https://search.asu.edu/profile/57492
Google:
"Michael Kozicki"
Bio:

https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.351663
http://hdl.handle.net/1842/12108 My gratitude goes to my supervisors Mr A.M. Gundlach and Prof A.E. Owen and especially to my principal supervisor, Dr J.M. Robertson, who has been my mentor during the course of this work

Parents

Sign in to add mentor
John M. Robertson grad student 1984 Edinburgh
 (Conductivity studies of polycrystalline-silicon films)

Collaborators

Sign in to add collaborator
David Alan Drabold collaborator 2000- Arizona State (Physics Tree)
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Huang X, Fang R, Yang C, et al. (2019) Steep-Slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide based Threshold Switching Device. Nanotechnology
Bartlett P, Berg AI, Bernasconi M, et al. (2019) Phase-change memories (PCM) - Experiments and modelling: general discussion. Faraday Discussions
Ambrosi E, Bartlett P, Berg AI, et al. (2019) Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion. Faraday Discussions
Taggart JL, Jacobs-Gedrim RB, McLain ML, et al. (2019) Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects Ieee Transactions On Nuclear Science. 66: 69-76
Subedi KN, Prasai K, Kozicki MN, et al. (2019) Structural origins of electronic conduction in amorphous copper-doped alumina Physical Review Materials. 3
Gonzalez-Velo Y, Patadia A, Barnaby HJ, et al. (2018) Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability. Faraday Discussions
Taggart JL, Chen W, Gonzalez-Velo Y, et al. (2018) In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment Ieee Transactions On Nuclear Science. 65: 192-199
Fang R, Livingston I, Esqueda IS, et al. (2018) Bias temperature instability model using dynamic defect potential for predicting CMOS aging Journal of Applied Physics. 123: 225701
Chen W, Fang R, Barnaby HJ, et al. (2017) Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors Ieee Transactions On Nuclear Science. 64: 269-276
Chen W, Chamele N, Gonzalez-Velo Y, et al. (2017) Low-Temperature Characterization of Cu–Cu:Silica-Based Programmable Metallization Cell Ieee Electron Device Letters. 38: 1244-1247
See more...