Paul Boieriu, Ph.D.
Affiliations: | 2002 | University of Illinois at Chicago, Chicago, IL, United States |
Area:
Condensed Matter Physics, Materials Science EngineeringGoogle:
"Paul Boieriu"Mean distance: (not calculated yet)
Parents
Sign in to add mentorSivalingam Sivananthan | grad student | 2002 | University of Illinois, Chicago | |
(Nucleation and interface formation of wurtzite cadmium sulfide on zinc -blende cadmium telluride(111).) |
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Publications
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Boieriu P, Park JH, Hahn S-, et al. (2016) SWIR HgCdTe photodiodes for LADAR applications Proceedings of Spie. 9974 |
Fahey S, Boieriu P, Morath C, et al. (2014) Influence of hydrogenation on electrical conduction in HgCdTe thin films on silicon Journal of Electronic Materials. 43: 2831-2840 |
Boieriu P, Velicu S, Bommena R, et al. (2013) High operation temperature of HgCdTe photodiodes by bulk defect passivation Proceedings of Spie - the International Society For Optical Engineering. 8631 |
Buurma C, Boieriu P, Bommena R, et al. (2013) Applications of the infrared measurement analyzer: Hydrogenated lwir hgcdte detectors Journal of Electronic Materials. 42: 3283-3287 |
Boieriu P, Buurma C, Bommena R, et al. (2013) Effects of inductively coupled plasma hydrogen on long-wavelength infrared hgcdte photodiodes Journal of Electronic Materials. 42: 3379-3384 |
Sood AK, Puri YR, Becker L, et al. (2006) Development of high performance radiation hardened antireflection coatings for LWIR and multicolor IR focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 6206 |
Boieriu P, Grein CH, Velicu S, et al. (2006) Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si Applied Physics Letters. 88 |
Boieriu P, Grein CH, Garland J, et al. (2006) Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si Journal of Electronic Materials. 35: 1385-1390 |
Jung HS, Boieriu P, Grein CH. (2006) p-Type HgTe/CdTe superlattices for very-long wavelength infrared detectors Journal of Electronic Materials. 35: 1341-1345 |
Boieriu P, Grein CH, Jung HS, et al. (2005) Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211) Applied Physics Letters. 86: 1-3 |