Giacomo Badano, Ph.D.

2003 University of Illinois at Chicago, Chicago, IL, United States 
Condensed Matter Physics
"Giacomo Badano"
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Sivalingam Sivananthan grad student 2003 University of Illinois, Chicago
 (Temperature-dependent adsorption of tellurium and mercury species on cadmium telluride studied by spectroscopic ellipsometry.)
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Chang Y, Badano G, Jiang E, et al. (2005) Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping Journal of Crystal Growth. 277: 78-84
Aoki T, Chang Y, Badano G, et al. (2004) Defect characterization for epitaxial HgCdTe alloys by electron microscopy Journal of Crystal Growth. 265: 224-234
Badano G, Chang Y, Garland JW, et al. (2004) In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of HgCdTe(211)B Journal of Electronic Materials. 33: 583-589
Chang Y, Badano G, Zhao J, et al. (2003) Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy Applied Physics Letters. 83: 4785-4787
Badano G, Chang Y, Garland JW, et al. (2003) Temperature-dependent adsorption of hg on cdte(211)b studied by spectroscopic ellipsometry Applied Physics Letters. 83: 2324-2326
Badano G, Zhao J, Chang Y, et al. (2003) Ellipsometric study of the nucleation of (2 1 1) HgCdTe on CdZnTe(2 1 1)B Journal of Crystal Growth. 258: 374-379
Badano G, Garland JW, Sivananthan S. (2003) Accuracy of the in situ determination of the CdZnTe temperature by ellipsometry before the growth of HgCdTe by MBE Journal of Crystal Growth. 251: 571-575
Aoki T, Chang Y, Badano G, et al. (2003) Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy Journal of Electronic Materials. 32: 703-709
Zhao J, Zhou YD, Badano G, et al. (2002) MBE growth of HgCdTe HOT detector heterostructures Proceedings of Spie - the International Society For Optical Engineering. 4795: 82-87
Badano G, Garland JW, Zhao J, et al. (2002) Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth Proceedings of Spie - the International Society For Optical Engineering. 4795: 70-75
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