Vitaliy Dorogan, Ph.D.
Affiliations: | 2011 | University of Arkansas, Little Rock, AR |
Area:
Condensed Matter Physics, Nanoscience, Materials Science EngineeringGoogle:
"Vitaliy Dorogan"Mean distance: (not calculated yet)
Parents
Sign in to add mentorGregory J. Salamo | grad student | 2011 | University of Arkansas | |
(Optical study of coupling mechanisms in quantum dot - quantum well hybrid nanostructure.) |
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Publications
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Kim D, Tang M, Wu J, et al. (2017) Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers Proceedings of Spie. 10099 |
Kim D, Tang M, Wu J, et al. (2016) Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers Ieee Journal of Photovoltaics |
Lam P, Wu J, Tang M, et al. (2016) InAs/InGaP quantum dot solar cells with an AlGaAs interlayer Solar Energy Materials and Solar Cells. 144: 96-101 |
Steele JA, Horvat J, Lewis RA, et al. (2015) Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures. Nanoscale |
Kuchuk AV, Lytvyn PM, Li C, et al. (2015) Nanoscale Electro-Structural Characterization of Compositionally Graded AlΧGa1-ΧN Heterostructures on GaN/sapphire (0001) Substrate. Acs Applied Materials & Interfaces |
Chen S, Tang M, Wu J, et al. (2015) Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate Photonics. 2: 646-658 |
Benamara M, Mazur YI, Lytvyn P, et al. (2015) Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux Mrs Proceedings. 1792 |
Chen S, Tang M, Jiang Q, et al. (2015) Electrically pumped 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si substrate lasing up to 111°C Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015 |
Mazur YI, Lopes-Oliveira V, De Souza LD, et al. (2015) Carrier transfer in vertically stacked quantum ring-quantum dot chains Journal of Applied Physics. 117 |
Tang M, Wu J, Chen S, et al. (2015) Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates Iet Optoelectronics. 9: 61-64 |