Jesse Huso, Ph.D.
Affiliations: | 2012 | University of Idaho, Moscow, ID, United States |
Area:
Condensed Matter Physics, Optics Physics, Plastics Technology, Materials Science EngineeringGoogle:
"Jesse Huso"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Leah Bergman | grad student | 2012 | University of Idaho | |
| (Advanced Optical Alloys: Thin Films and Phonon Properties.) | ||||
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Publications
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| Ahmed SE, Huso J, Ritter JR, et al. (2020) Insulating regions in a TiO2 thin film defined by laser irradiation Journal of Vacuum Science & Technology B. 38: 032203 |
| Lapp J, Thapa D, Huso J, et al. (2020) Enhancement of the ultraviolet photoluminescence of ZnO films: Coatings, annealing, and environmental exposure studies Aip Advances. 10: 85217 |
| Huso J, Bergman L, McCluskey MD. (2019) Bandgap of cubic ZnS1-xOx from optical transmission spectroscopy Journal of Applied Physics. 125: 075704 |
| Huso J, Ritter JR, Bergman L, et al. (2019) High Order Oxygen Local Vibrational Modes in ZnS 1−x O x Physica Status Solidi (B). 256: 1800607 |
| Ritter JR, Huso J, Dickens PT, et al. (2018) Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3 Applied Physics Letters. 113: 052101 |
| Poole VM, Huso J, McCluskey MD. (2018) The role of hydrogen and oxygen in the persistent photoconductivity of strontium titanate Journal of Applied Physics. 123: 161545 |
| Huso J, Ritter JR, Thapa D, et al. (2018) Oxygen vibrational modes in ZnS1−xOxalloys Journal of Applied Physics. 123: 161537 |
| Thapa D, Huso J, Lapp J, et al. (2018) Thermal stability of ultra-wide-bandgap MgZnO alloys with wurtzite structure Journal of Materials Science: Materials in Electronics. 29: 16782-16790 |
| Thapa D, Huso J, Morrison JL, et al. (2016) Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films Optical Materials. 58: 382-389 |
| Thapa D, Huso J, Miklos K, et al. (2016) UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties Journal of Materials Science: Materials in Electronics. 28: 2511-2520 |