Anupama Mallikarjunan, Ph.D.

Affiliations: 
2002 Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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"Anupama Mallikarjunan"
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Parents

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Toh-Ming Lu grad student 2002 RPI
 (Electrical stability of metal /low dielectric constant material systems.)
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Publications

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Faraz T, van Drunen M, Knoops HC, et al. (2017) Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies. Acs Applied Materials & Interfaces
Hsu IJ, Vrtis RN, Al-Rashid JE, et al. (2012) Understanding the impact of porosity and pore structure in ultra low dielectric constant organosilicate glasses Materials Research Society Symposium Proceedings. 1428: 38-44
Mallikarjunan A, Johnson AD, Matz L, et al. (2012) Silicon precursor development for advanced dielectric barriers for VLSI technology Microelectronic Engineering. 92: 83-85
Mallikarjunan A, Matz LM, Johnson AD, et al. (2011) Precursor design and engineering for low-temperature deposition of gate dielectrics for thin film transistors Materials Research Society Symposium Proceedings. 1287: 36-44
Belyansky M, Chace M, Gluschenkov O, et al. (2008) Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 517-521
Jain P, Juneja JS, Mallikarjunan A, et al. (2006) Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress Applied Physics Letters. 88
Belyansky M, Klymko N, Madan A, et al. (2005) Stress generation in PECVD silicon nitride thin films for microelectronics applications Materials Research Society Symposium Proceedings. 875: 325-330
Jezewski C, Wiegand CJ, Ye D, et al. (2004) Molecular Caulking: A pore sealing CVD polymer for ultralow k dielectrics Journal of the Electrochemical Society. 151
Senkevich JJ, Mallikarjunan A, Wiegand CJ, et al. (2004) Correlation Between Bond Cleavage in Parylene N and the Degradation of Its Dielectric Properties Electrochemical and Solid-State Letters. 7
Mallikarjunan A, Murarka SP, Lu TM. (2004) Separation of copper ion-induced and intrinsic polymer instabilities in polyarylether using triangular voltage sweep Journal of Applied Physics. 95: 1216-1221
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