Gregg H. Jessen, Ph.D.

2002 Ohio State University, Columbus, Columbus, OH 
Electronics and Electrical Engineering, Materials Science Engineering
"Gregg Jessen"
Mean distance: (not calculated yet)


Sign in to add mentor
Leonard J. Brillson grad student 2002 Ohio State
 (Investigation and characterization of aluminum gallium nitride/gallium nitride device structures and the effects of material defects and processing on device performance.)
BETA: Related publications


You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Schuette ML, Green AJ, Leedy K, et al. (2016) Ionic Metal-Oxide TFTs for Integrated Switching Applications Ieee Transactions On Electron Devices. 63: 1921-1927
Green AJ, Chabak KD, Heller ER, et al. (2016) 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs Ieee Electron Device Letters. 37: 902-905
Gillespie JK, Chabak KD, Crespo A, et al. (2016) Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC process Cs Mantech 2016 - International Conference On Compound Semiconductor Manufacturing Technology. 23-26
Ramirez JI, Li YV, Basantani H, et al. (2015) Radiation-hard ZnO thin film transistors Ieee Transactions On Nuclear Science. 62: 1399-1404
Fitch RC, Walker DE, Green AJ, et al. (2015) Implementation of High-Power-Density X-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process Ieee Electron Device Letters. 36: 1004-1007
Via GD, Felbinger JG, Blevins J, et al. (2014) Wafer-scale GaN HEMT performance enhancement by diamond substrate integration Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 871-874
Trejo M, Jessen GH, Chabak KD, et al. (2011) Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management Physica Status Solidi (a) Applications and Materials Science. 208: 439-444
Chabak KD, Trejo M, Crespo A, et al. (2010) Strained AlInN/GaN HEMTs on SiC with 2.1-A/mm output current and 104-GHz cutoff frequency Ieee Electron Device Letters. 31: 561-563
Chabak KD, Gillespie JK, Miller V, et al. (2010) Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates Ieee Electron Device Letters. 31: 99-101
Crespo A, Bellot MM, Chabak KD, et al. (2010) High-power ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier Ieee Electron Device Letters. 31: 2-4
See more...