Gregg H. Jessen, Ph.D.

Affiliations: 
2002 Ohio State University, Columbus, Columbus, OH 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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Parents

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Leonard J. Brillson grad student 2002 Ohio State
 (Investigation and characterization of aluminum gallium nitride/gallium nitride device structures and the effects of material defects and processing on device performance.)
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Publications

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Schuette ML, Green AJ, Leedy K, et al. (2016) Ionic Metal-Oxide TFTs for Integrated Switching Applications Ieee Transactions On Electron Devices. 63: 1921-1927
Green AJ, Chabak KD, Heller ER, et al. (2016) 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs Ieee Electron Device Letters. 37: 902-905
Gillespie JK, Chabak KD, Crespo A, et al. (2016) Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC process Cs Mantech 2016 - International Conference On Compound Semiconductor Manufacturing Technology. 23-26
Ramirez JI, Li YV, Basantani H, et al. (2015) Radiation-hard ZnO thin film transistors Ieee Transactions On Nuclear Science. 62: 1399-1404
Fitch RC, Walker DE, Green AJ, et al. (2015) Implementation of High-Power-Density X-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process Ieee Electron Device Letters. 36: 1004-1007
Via GD, Felbinger JG, Blevins J, et al. (2014) Wafer-scale GaN HEMT performance enhancement by diamond substrate integration Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 871-874
Trejo M, Jessen GH, Chabak KD, et al. (2011) Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management Physica Status Solidi (a) Applications and Materials Science. 208: 439-444
Chabak KD, Trejo M, Crespo A, et al. (2010) Strained AlInN/GaN HEMTs on SiC with 2.1-A/mm output current and 104-GHz cutoff frequency Ieee Electron Device Letters. 31: 561-563
Chabak KD, Gillespie JK, Miller V, et al. (2010) Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates Ieee Electron Device Letters. 31: 99-101
Crespo A, Bellot MM, Chabak KD, et al. (2010) High-power ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier Ieee Electron Device Letters. 31: 2-4
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