Serhii Tumakha, Ph.D.
Affiliations: | 2006 | Ohio State University, Columbus, Columbus, OH |
Area:
Electronics and Electrical EngineeringGoogle:
"Serhii Tumakha"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Leonard J. Brillson | grad student | 2006 | Ohio State | |
| (Investigation of 4H and 6H-silicon carbide thin films and Schottky diodes using depth-dependent cathodoluminescence spectroscopy.) | ||||
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Publications
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| Strzhemechny YM, Bataiev M, Tumakha SP, et al. (2008) Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2- SiO2-Si stacks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 232-243 |
| Ewing DJ, Porter LM, Wahab Q, et al. (2007) Inhomogeneities in Ni4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states Journal of Applied Physics. 101 |
| Gao M, Tsukimoto S, Goss SH, et al. (2007) Role of interface layers and localized states in TiAl-based Ohmic contacts to p-type 4H-SiC Journal of Electronic Materials. 36: 277-284 |
| Ewing DJ, Wahab Q, Tumakha S, et al. (2006) A study of inhomogeneous Schottky diodes on n-type 4H-SiC Materials Science Forum. 527: 911-914 |
| Tumakha S, Porter LM, Ewing DJ, et al. (2006) Nanoscale deep level defect correlation with Schottky barriers in 4H-SiC/metal diodes Materials Science Forum. 527: 907-910 |
| Gao M, Tumakha SP, Onishi T, et al. (2006) Characterization of Ti/Al ohmic contacts to p-type 4H-SiC using cathodoluminescence and Auger electron spectroscopies Materials Science Forum. 527: 891-894 |
| Tumakha S, Goss SH, Brillson LJ, et al. (2005) Electronic defect states at annealed metal/4H-SiC interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 594-598 |
| Tumakha S, Ewing DJ, Porter LM, et al. (2005) Defect-driven inhomogeneities in Ni4H-SiC Schottky barriers Applied Physics Letters. 87: 1-3 |
| Brillson LJ, Bradley ST, Tumakha SH, et al. (2005) Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Applied Surface Science. 244: 257-263 |
| Brillson LJ, Tumakha S, Okojie RS, et al. (2004) SiC studied via LEEN and cathodoluminescence spectroscopy Materials Science Forum. 457: 543-548 |