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Daniel R. Doutt, Ph.D.

Affiliations: 
2013 Physics Ohio State University, Columbus, Columbus, OH 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering, Nanoscience
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Leonard J. Brillson grad student 2013 Ohio State
 (The role of native point defects and surface chemical reactions in the formation of Schottky barriers and high n-type doping in zinc oxide.)

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Doutt DR, Balaz S, Isabella L, et al. (2013) Role of native point defects and Ga diffusion on electrical properties of degenerate Ga-doped ZnO Physica Status Solidi (B) Basic Research. 250: 2114-2117
Brillson LJ, Zhang Z, Doutt DR, et al. (2013) Interplay of dopants and native point defects in ZnO Physica Status Solidi (B) Basic Research. 250: 2110-2113
Brillson LJ, Dong Y, Tuomisto F, et al. (2012) Interplay of native point defects with ZnO Schottky barriers and doping Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30
Lin CH, Merz TA, Doutt DR, et al. (2012) Strain and temperature dependence of defect formation at AlGaN/GaN high-electron-mobility transistors on a nanometer scale Ieee Transactions On Electron Devices. 59: 2667-2674
Brillson LJ, Dong Y, Tuomisto F, et al. (2012) Native point defects at ZnO surfaces, interfaces and bulk films Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1566-1569
Look DC, Leedy KD, Vines L, et al. (2011) Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO Physical Review B - Condensed Matter and Materials Physics. 84
Merz TA, Doutt DR, Bolton T, et al. (2011) Nanostructure growth-induced defect formation and band bending at ZnO surfaces Surface Science. 605
Lin CH, Doutt DR, Mishra UK, et al. (2010) Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale Applied Physics Letters. 97
Dong Y, Fang ZQ, Look DC, et al. (2010) Defects at oxygen plasma cleaned ZnO polar surfaces Journal of Applied Physics. 108
Dong Y, Fang ZQ, Look DC, et al. (2009) Polarity-related asymetry at ZnO surfaces and metal interfaces Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1710-1716
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