Talal M. Al tahtamouni, Ph.D.
Affiliations: | 2007 | Department of Physics | Kansas State University, Manhattan, KS, United States |
Area:
Condensed Matter Physics, Materials Science EngineeringGoogle:
"Talal Al tahtamouni"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Hongxing Jiang | grad student | 2007 | Kansas State University | |
| (MOCVD growth and characterization of aluminum-rich aluminum nitride/aluminum gallium nitride epilayers and quantum wells.) | ||||
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Publications
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| Al Tahtamouni TM, Du X, Lin J, et al. (2015) Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition Optical Materials Express. 5: 648-654 |
| Al Tahtamouni TM, Du X, Li J, et al. (2015) Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition Optical Materials Express. 5: 274-280 |
| Al Tahtamouni TM, Lin JY, Jiang HX. (2013) Effects of double layer AlN buffer layers on properties of Si-doped Al xGa1-xN for improved performance of deep ultraviolet light emitting diodes Journal of Applied Physics. 113 |
| Al Tahtamouni TM, Li J, Lin JY, et al. (2012) Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates Journal of Physics D: Applied Physics. 45 |
| Al Tahtamouni TM, Lin JY, Jiang HX. (2012) High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors Applied Physics Letters. 101 |
| Al Tahtamouni TM, Lin JY, Jiang HX. (2012) Optical polarization in c-plane Al-rich AlN/Al xGa 1-xN single quantum wells Applied Physics Letters. 101 |
| Sedhain A, Nepal N, Nakarmi ML, et al. (2008) Photoluminescence properties of AlN homoepilayers with different orientations Applied Physics Letters. 93 |
| Al Tahtamouni TM, Sedhain A, Lin JY, et al. (2008) Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant Applied Physics Letters. 92 |
| Dahal R, Li J, Fan ZY, et al. (2008) AlN MSM and Schottky photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2148-2151 |
| Pantha BN, Nepal N, Al Tahtamouni TM, et al. (2007) Correlation between biaxial stress and free exciton transition in AlN epilayers Applied Physics Letters. 91 |