Nola S. Li, Ph.D.
Affiliations: | 2009 | Georgia Institute of Technology, Atlanta, GA |
Area:
Electronics and Electrical EngineeringGoogle:
"Nola Li"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Christopher J. Summers | grad student | 2009 | Georgia Tech | |
| (Gallium nitride on zinc oxide: A new approach to solid state lighting.) | ||||
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Publications
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| Li N, Wang S, Fenwick WE, et al. (2009) Al 2 O 3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD Mrs Proceedings. 1201 |
| Li N, Fenwick W, Melton A, et al. (2009) III-nitride epilayers on ZnO substrates by MOCVD using Al2O 3 as a transition layer Proceedings of Spie - the International Society For Optical Engineering. 7422 |
| Fenwick W, Melton A, Li N, et al. (2009) MOCVD growth of GaN on Si substrates using an ALD-grown Al 2O3 interlayer Proceedings of Spie - the International Society For Optical Engineering. 7422 |
| Hung I, Lan Y, Wu TH, et al. (2009) Nanoscale InGaN/GaN on ZnO substrate for LED applications Proceedings of Spie. 7422 |
| Wang S, Li N, Yu HB, et al. (2009) Metalorganic chemical vapour deposition of GaN layers on ZnO substrates using α-Al2O3 as a transition layer Journal of Physics D. 42: 245302 |
| Fenwick WE, Melton A, Xu T, et al. (2009) Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer Applied Physics Letters. 94 |
| Li N, Wang S, Park E, et al. (2009) Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates Journal of Crystal Growth. 311: 4628-4631 |
| Fenwick WE, Li N, Xu T, et al. (2009) MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al2O3 interlayer Journal of Crystal Growth. 311: 4306-4310 |
| Zaidi T, Jamil M, Melton A, et al. (2008) NH 3 Doping in MOCVD Growth of ZnO Thin Films Mrs Proceedings. 1109 |
| Yu H, Wang S, Li N, et al. (2008) MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications Proceedings of Spie. 7058 |