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Henryk J. Lozykowski

Affiliations: 
Ohio University, Athens, OH, United States 
Area:
Condensed Matter Physics, Materials Science Engineering
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"Henryk Lozykowski"
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Wojciech M. Jadwisienczak grad student 2001 Ohio University

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Koubaa T, Dammak M, Kammoun M, et al. (2010) Crystal field and Zeeman parameters of substitutional Yb3+ ion in GaN Journal of Alloys and Compounds. 496: 56-60
Koubaa T, Dammak M, Kammoun M, et al. (2009) Spectra and energy levels of Yb3+ in AIN Journal of Applied Physics. 106
Khan A, Jadwisienczak WM, Lozykowski HJ, et al. (2007) Catalyst-free synthesis and luminescence of aligned ZnO nanorods Physica E: Low-Dimensional Systems and Nanostructures. 39: 258-261
Lozykowski HJ, Jadwisienczak WM. (2007) Thermal quenching of luminescence and isovalent trap model for rare-earth-ion-doped AlN Physica Status Solidi (B) Basic Research. 244: 2109-2126
Khan A, Jadwisienczak WM, Lozykowski HJ, et al. (2006) Fabrication and luminescence properties of monoclinic gallium oxide (β-Ga2O3) nanostructures Materials Research Society Symposium Proceedings. 951: 239-244
Lozykowski HJ, Jadwisienczak WM, Bensaoula A, et al. (2005) Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN Microelectronics Journal. 36: 453-455
Ingram DC, Lozykowski H, Jadwisienczak WM. (2004) RBS ion channeling study of low concentrations of ion implanted samarium in GaN Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 699-702
Jadwisienczak WM, Lozykowski HJ, Bensaoula A, et al. (2003) Luminescence of Pr and Tm ions implanted into AIN thin films 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 74
Jadwisienczak WM, Lozykowski HJ. (2003) Optical properties of Yb ions in GaN epilayer Optical Materials. 23: 175-181
Gruber JB, Zandi B, Lozykowski HJ, et al. (2002) Spectra and energy levels of Tb 3+(4f 8) in GaN Journal of Applied Physics. 92: 5127-5132
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