Osama O. Awadelkarim
Affiliations: | Pennsylvania State University, State College, PA, United States |
Area:
Materials Science Engineering, Electronics and Electrical Engineering, General PhysicsGoogle:
"Osama Awadelkarim"Mean distance: (not calculated yet)
Children
Sign in to add traineeLevent Trabzon | grad student | 2000 | Penn State |
Jiayu Jiang | grad student | 2004 | Penn State |
Karthik Sarpatwari | grad student | 2009 | Penn State |
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Publications
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Khawaji IH, Awadelkarim OO, Lakhtakia A. (2019) Effects of constant-voltage stress on the stability of Parylene-C columnar microfibrous thin films Ieee Transactions On Dielectrics and Electrical Insulation. 26: 270-275 |
Khawaji IH, Chindam C, Awadelkarim OO, et al. (2017) Dielectric Properties of and Charge Transport in Columnar Microfibrous Thin Films of Parylene C Ieee Transactions On Electron Devices. 64: 3360-3367 |
Khawaji IH, Chindam C, Orfali W, et al. (2015) Electrical studies on Parylene-C columnar microfibrous thin films Ecs Transactions. 69: 113-119 |
Suliman SA, Awadelkarim OO, Hao J, et al. (2014) High-temperature reverse-bias stressing of thin gate oxides in power transistors Ecs Transactions. 64: 45-52 |
Hao J, Rioux M, Suliman SA, et al. (2014) High temperature bias-stress-induced instability in power trench-gated MOSFETs Microelectronics Reliability. 54: 374-380 |
Sarpatwari K, Awadelkarim OO, Passmore LJ, et al. (2011) Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors Ieee Transactions On Nanotechnology. 10: 871-874 |
Hao J, Rioux M, Awadelkarim OO. (2011) Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs Ieee International Integrated Reliability Workshop Final Report. 129-132 |
Sarpatwari K, Mohney SE, Awadelkarim OO. (2011) Effects of barrier height inhomogeneities on the determination of the Richardson constant Journal of Applied Physics. 109 |
Passmore LJ, Awadelkarim OO, Cusumano JP. (2010) High-sensitivity tracking of MOSFET damage using dynamic-mode transient measurements Ieee Transactions On Instrumentation and Measurement. 59: 1734-1742 |
Sarpatwari K, Dellas NS, Awadelkarim OO, et al. (2010) Extracting the Schottky barrier height from axial contacts to semiconductor nanowires Solid-State Electronics. 54: 689-695 |