Karthik Sarpatwari, Ph.D.
Affiliations: | 2009 | Pennsylvania State University, State College, PA, United States |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Karthik Sarpatwari"Mean distance: (not calculated yet)
Parents
Sign in to add mentorOsama O. Awadelkarim | grad student | 2009 | Penn State | |
(Toward understanding the electrical properties of metal/semiconductor Schottky contacts: The effects of barrier inhomogeneities and geometry in bulk and nanoscale structures.) |
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Publications
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Sarpatwari K, Awadelkarim OO, Passmore LJ, et al. (2011) Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors Ieee Transactions On Nanotechnology. 10: 871-874 |
Sarpatwari K, Mohney SE, Awadelkarim OO. (2011) Effects of barrier height inhomogeneities on the determination of the Richardson constant Journal of Applied Physics. 109 |
Sarpatwari K, Dellas NS, Awadelkarim OO, et al. (2010) Extracting the Schottky barrier height from axial contacts to semiconductor nanowires Solid-State Electronics. 54: 689-695 |
Sarpatwari K, Mohney SE, Ashok S, et al. (2010) Minority carrier injection limited current in Re/4H-SiC Schottky diodes Physica Status Solidi (a) Applications and Materials Science. 207: 1509-1513 |
Allen MW, Weng X, Redwing JM, et al. (2009) Temperature-dependent properties of nearly ideal ZnO schottky diodes Ieee Transactions On Electron Devices. 56: 2160-2164 |
Sarpatwari K, Awadelkarim OO, Allen MW, et al. (2009) Erratum: “Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes” [Appl. Phys. Lett. 94, 242110 (2009)] Applied Physics Letters. 95: 59901 |
Sarpatwari K, Awadelkarim OO, Allen MW, et al. (2009) Extracting the Richardson constant: IrOx /n-ZnO Schottky diodes Applied Physics Letters. 94 |
Srinivasan S, Krishnan R, Mangalagiri P, et al. (2008) Toward increasing FPGA lifetime Ieee Transactions On Dependable and Secure Computing. 5: 115-126 |
Awadelkarim OO, Jiang J, Suliman SA, et al. (2007) Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems Ecs Transactions. 9: 353-362 |
Sarpatwari K, Passmore L, Suliman SA, et al. (2007) Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques Solid-State Electronics. 51: 644-649 |