Seoyong Ha, Ph.D.
Affiliations: | 2002 | Carnegie Mellon University, Pittsburgh, PA |
Area:
Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Seoyong Ha"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Marek Skowronski | grad student | 2002 | Carnegie Mellon | |
| (Plastic deformation of silicon carbide crystals during the sublimation bulk growth process.) | ||||
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Publications
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| Zhang X, Ha S, Hanlumnyang Y, et al. (2007) Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition Journal of Applied Physics. 101 |
| Zhang X, Ha SY, Benamara M, et al. (2006) Structure of Carrot Defects in 4H-SiC Epilayers Materials Science Forum. 327-332 |
| Sumakeris JJ, Bergman JP, Das MK, et al. (2006) Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Materials Science Forum. 141-146 |
| Sumakeris JJ, Hull BA, O'Loughlin MJ, et al. (2006) Do You Really Expect To Grow Epilayers On That? A Rationale For Growing Epilayers On Roughened Surfaces Mrs Proceedings. 911 |
| Skowronski M, Ha S. (2006) Degradation of hexagonal silicon-carbide-based bipolar devices Journal of Applied Physics. 99 |
| Sumakeris JJ, Das MK, Ha SY, et al. (2005) Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices Materials Science Forum. 155-158 |
| Ha S, Bergman JP. (2005) Degradation of SiC High-Voltage pin Diodes Mrs Bulletin. 30: 305-307 |
| Ha S, Skowronski M, Sumakeris JJ, et al. (2004) Driving force of stacking-fault formation in SiC p-i-n diodes. Physical Review Letters. 92: 175504 |
| Sumakeris JJ, Das MK, Hobgood HM, et al. (2004) Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Materials Science Forum. 1113-1116 |
| Zhang X, Ha S, Benamara M, et al. (2004) Cross-sectional structure of carrot defects in 4H–SiC epilayers Applied Physics Letters. 85: 5209-5211 |