Chen-Han Lin, Ph.D.

Affiliations: 
2011 Texas A & M University, College Station, TX, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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"Chen-Han Lin"
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Ohannes Eknoyan grad student 2011 Texas A & M
 (Nanocrystals embedded zirconium-doped hafnium oxide high-k gate dielectric films.)
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Publications

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Yang CH, Kuo Y, Lin CH, et al. (2011) Temperature effects on charge transfer mechanisms of nc-ITO embedded ZrHfO high-k nonvolatile memory devices Materials Research Society Symposium Proceedings. 1337: 27-33
Lin C, Kuo Y. (2011) Single- and Dual-Layer Nanocrystalline Indium Tin Oxide Embedded ZrHfO High-k Films for Nonvolatile Memories – Material and Electrical Properties Journal of the Electrochemical Society. 158
Lin C, Kuo Y. (2011) Ruthenium Modified Zr-Doped HfO2 High-k Thin Films with Low Equivalent Oxide Thickness Journal of the Electrochemical Society. 158
Lin C, Kuo Y. (2011) Nanocrystalline ruthenium oxide embedded zirconium-doped hafnium oxide high-k nonvolatile memories Journal of Applied Physics. 110: 24101
Lin C, Kuo Y. (2010) Charge Trapping Sites in nc-RuO Embedded ZrHfO High-k Nonvolatile Memories Mrs Proceedings. 1250
Yang C, Kuo Y, Lin C. (2010) Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories Applied Physics Letters. 96: 192106
Yang C, Kuo Y, Lin C, et al. (2009) Reliability of nc-ZnO Embedded ZrHfO High- k Nonvolatile Memory Devices Stressed at High Temperatures Mrs Proceedings. 1160
Yang C, Kuo Y, Lin C, et al. (2008) Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories Mrs Proceedings. 1071
Lu J, Lin C, Kuo Y. (2008) Nanocrystalline Zinc-Oxide-Embedded Zirconium-Doped Hafnium Oxide for Nonvolatile Memories Journal of the Electrochemical Society. 155
Birge A, Lin C, Kuo Y. (2007) Memory Functions of Nanocrystalline Indium Tin Oxide Embedded Zirconium-Doped Hafnium Oxide MOS Capacitors Journal of the Electrochemical Society. 154
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