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Yihwan Kim, Ph.D.

Affiliations: 
2000 University of California, Berkeley, Berkeley, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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Eicke R. Weber grad student 2000 UC Berkeley
 (Stress and defect control by buffer layers in heteroepitaxial GaN thin films.)

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Harutyunyan VS, Aivazyan AP, Weber ER, et al. (2001) High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures Journal of Physics D. 34
Kim Y, Shapiro NA, Feick H, et al. (2001) Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth Applied Physics Letters. 78: 895-897
Kim Y, Subramanya SG, Krueger J, et al. (2000) Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer Mrs Proceedings. 622
Kim Y, Subramanya SG, Siegle H, et al. (2000) GaN thin films by growth on Ga-rich GaN buffer layers Journal of Applied Physics. 88: 6032-6036
Hofmann DM, Meyer BK, Alves H, et al. (2000) Red (1.8 eV) luminescence in epitaxially grown GaN Physica Status Solidi (a) Applied Research. 180: 261-265
Siegle H, Kim Y, Sudhir GS, et al. (1999) High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001) Mrs Proceedings. 572: 451
Ruvimov S, Liliental-Weber Z, Washburn J, et al. (1999) Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer Materials Research Society Symposium - Proceedings. 572: 295-300
Krüiger J, Shapiro N, Subramanya S, et al. (1999) The influence of the sapphire substrate on the temperature dependence of the GaN bandgap Mrs Proceedings. 572: 289
Cho Y, Kim Y, Weber ER, et al. (1999) Chemical And Structural Transformation Of Sapphire (Al2O3) Surface By Plasma Source Nitridation Journal of Applied Physics. 85: 7909-7913
Lorusso GF, Solak H, Cerrina F, et al. (1998) X-Ray Photoemission Spectromicroscopy Of Gan And AIGan Mrs Proceedings. 512: 393
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