Ri-an Zhao, Ph.D.
Affiliations: | 2002 | University of California, Berkeley, Berkeley, CA, United States |
Area:
Materials Science Engineering, Optics PhysicsGoogle:
"Ri-an Zhao"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Eicke R. Weber | grad student | 2002 | UC Berkeley | |
| (Growth and defect characterization of low temperature molecular beam epitaxy GaAs.) | ||||
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Publications
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| Tzeng SY, Cich MJ, Zhao R, et al. (2003) Generation-recombination low-frequency noise signatures in GaAs metal-semiconductor field-effect transistors on laterally oxidized AlAs Applied Physics Letters. 82: 1063-1065 |
| Zhao RA, Cich MJ, Specht P, et al. (2002) In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs Applied Physics Letters. 80: 2060-2062 |
| Zhukov AE, Zhao R, Specht P, et al. (2001) MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source Semiconductor Science and Technology. 16: 413-419 |
| Gebauer J, Zhao R, Specht P, et al. (2001) Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures Applied Physics Letters. 79: 4313-4315 |
| Gebauer J, Zhao R, Specht P, et al. (2001) Native point defects in non-stoichiometric GaAs doped with beryllium Physica B-Condensed Matter. 308: 812-815 |
| Specht P, Cich MJ, Zhao R, et al. (2001) Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs: Be Physica B: Condensed Matter. 308: 808-811 |
| Park Y, Cich MJ, Zhao R, et al. (2001) AFM study of lattice matched and strained InGaAsN layers on GaAs Physica B: Condensed Matter. 308: 98-101 |
| Liu WK, Lubyshev DI, Specht P, et al. (2000) Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1594-1597 |
| Park Y, Cich MJ, Zhao R, et al. (2000) Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1566-1571 |
| Cich MJ, Zhao R, Park Y, et al. (1999) ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs Mrs Proceedings. 570: 129 |