Ri-an Zhao, Ph.D.

Affiliations: 
2002 University of California, Berkeley, Berkeley, CA, United States 
Area:
Materials Science Engineering, Optics Physics
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"Ri-an Zhao"
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Eicke R. Weber grad student 2002 UC Berkeley
 (Growth and defect characterization of low temperature molecular beam epitaxy GaAs.)
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Publications

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Tzeng SY, Cich MJ, Zhao R, et al. (2003) Generation-recombination low-frequency noise signatures in GaAs metal-semiconductor field-effect transistors on laterally oxidized AlAs Applied Physics Letters. 82: 1063-1065
Zhao RA, Cich MJ, Specht P, et al. (2002) In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs Applied Physics Letters. 80: 2060-2062
Zhukov AE, Zhao R, Specht P, et al. (2001) MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source Semiconductor Science and Technology. 16: 413-419
Gebauer J, Zhao R, Specht P, et al. (2001) Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures Applied Physics Letters. 79: 4313-4315
Gebauer J, Zhao R, Specht P, et al. (2001) Native point defects in non-stoichiometric GaAs doped with beryllium Physica B-Condensed Matter. 308: 812-815
Specht P, Cich MJ, Zhao R, et al. (2001) Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs: Be Physica B: Condensed Matter. 308: 808-811
Park Y, Cich MJ, Zhao R, et al. (2001) AFM study of lattice matched and strained InGaAsN layers on GaAs Physica B: Condensed Matter. 308: 98-101
Liu WK, Lubyshev DI, Specht P, et al. (2000) Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1594-1597
Park Y, Cich MJ, Zhao R, et al. (2000) Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1566-1571
Cich MJ, Zhao R, Park Y, et al. (1999) ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs Mrs Proceedings. 570: 129
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