William D. Hong, Ph.D.
Affiliations: | 2007 | University of California, Berkeley, Berkeley, CA, United States |
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter PhysicsGoogle:
"William Hong"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Eicke R. Weber | grad student | 2007 | UC Berkeley | |
| (Inhomogeneities and piezoelectric fields in indium gallium nitride quantum wells.) | ||||
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Publications
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| Bradshaw GK, Samberg JP, Carlin CZ, et al. (2014) GaInP/GaAs tandem solar cells with InGaAs/GaAsP multiple quantum wells Ieee Journal of Photovoltaics. 4: 614-619 |
| Chiu PT, Law DC, Woo RL, et al. (2014) Direct semiconductor bonded 5J cell for space and terrestrial applications Ieee Journal of Photovoltaics. 4: 493-497 |
| Leite MS, Woo RL, Munday JN, et al. (2013) Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50% Applied Physics Letters. 102 |
| Leite MS, Woo RL, Hong WD, et al. (2011) Wide-band-gap InAlAs solar cell for an alternative multijunction approach Applied Physics Letters. 98 |
| Shapiro NA, Feick H, Hong W, et al. (2003) Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain Journal of Applied Physics. 94: 4520-4529 |
| Armitage R, Hong W, Yang Q, et al. (2003) Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN Applied Physics Letters. 82: 3457-3459 |
| Shapiro NA, Feick H, Hong W, et al. (2002) Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures Mrs Proceedings. 722 |