Gregory L. Snider
Affiliations: | University of Notre Dame, Notre Dame, IN, United States |
Area:
Electronics and Electrical Engineering, Condensed Matter PhysicsGoogle:
"Gregory Snider"Mean distance: (not calculated yet)
Children
Sign in to add traineeRavi K. Kummamuru | grad student | 2004 | Notre Dame |
Xiangning Luo | grad student | 2005 | Notre Dame |
Kameshwar K. Yadavalli | grad student | 2005 | Notre Dame |
Vishwanath Joshi | grad student | 2009 | Notre Dame |
Aaron A. Prager | grad student | 2010 | Notre Dame |
Hubert C. George | grad student | 2011 | Notre Dame |
Yen-Chun Lee | grad student | 2012 | Notre Dame |
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Publications
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Mintairov AM, Lebedev DV, Vlasov AS, et al. (2021) Nano-photoluminescence of natural anyon molecules and topological quantum computation. Scientific Reports. 11: 21440 |
Zirkle TA, Filmer MJ, Chisum J, et al. (2020) Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications Applied Sciences. 10: 8797 |
McCabe H, Koziol SM, Snider GL, et al. (2020) Tunable, Hardware-Based Quantum Random Number Generation Using Coupled Quantum Dots Ieee Transactions On Nanotechnology. 19: 292-296 |
Filmer MJ, Zirkle TA, Chisum J, et al. (2020) Using single-electron box arrays for voltage sensing applications Applied Physics Letters. 116: 213103 |
Zirkle TA, Bonek RA, Snider GL, et al. (2019) Temperature Effects on Singularity Matching and Parity in a Superconducting Single-Electron Transistor Journal of Low Temperature Physics. 195: 419-428 |
Filmer MJ, Snider GL, Orlov AO. (2018) Single electron transistors with e-beam evaporation of SiO2 tunnel barriers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 62202 |
Karbasian G, McConnell MS, Orlov A, et al. (2017) Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal-insulator-metal tunnel junctions. Nanotechnology |
Karbasian G, McConnell M, George H, et al. (2017) Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition Applied Sciences. 7: 246 |
McConnell MS, Schneider LC, Karbasian G, et al. (2016) Atomic layer deposition of Al2O3 for single electron transistors utilizing Pt oxidation and reduction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34 |
Karbasian G, McConnell MS, Orlov AO, et al. (2016) Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34 |