Sandip Tiwari
Affiliations: | 1999- | Electrical and Computer Engineering | Cornell University, Ithaca, NY, United States |
Area:
semiconductor electronics and opticsWebsite:
https://www.engineering.cornell.edu/faculty-directory/sandip-tiwariGoogle:
"Sandip Tiwari"Bio:
https://books.google.com/books?id=5WZUAAAAYAAJ
Mean distance: (not calculated yet)
Cross-listing: Materials Tree
Parents
Sign in to add mentor| Lester F. Eastman | grad student | 1980 | Cornell | |
| (A Study of the Device and Materials Related Aspects of the Microwave Gallium Arsenide Power MESFET) | ||||
Children
Sign in to add trainee| Jeremy A. Wahl | grad student | 2004 | Cornell |
| Uygar E. Avci | grad student | 2005 | Cornell |
| Ali Gokirmak | grad student | 2005 | Cornell (E-Tree) |
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Joe DJ, Hwang J, Johnson C, et al. (2016) Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection. Journal of Nanoscience and Nanotechnology. 16: 144-51 |
| Joe DJ, Hwang J, Johnson C, et al. (2016) Surface functionalized graphene biosensor on sapphire for cancer cell detection Journal of Nanoscience and Nanotechnology. 16: 144-151 |
| Wang H, Zhang C, Chan W, et al. (2015) Ultrafast response of monolayer molybdenum disulfide photodetectors. Nature Communications. 6: 8831 |
| Kim J, Tiwari S. (2014) Inexact computing using probabilistic circuits Acm Journal On Emerging Technologies in Computing Systems. 10: 1-23 |
| Bryce BA, Ilic BR, Reuter MC, et al. (2014) Wafer scale tilt-compensated silicon nanowire atomic force microscopy probes for high aspect ratio geometries Journal of Micromechanics and Microengineering. 24 |
| Hyeon Lee S, Kim M, Ha SD, et al. (2013) Space charge polarization induced memory in SmNiO3/Si transistors Applied Physics Letters. 102 |
| Kim J, Lee S, Rubin J, et al. (2013) Scale changes in electronics: Implications for nanostructure devices for logic and memory and beyond Solid-State Electronics. 84: 2-12 |
| Kim M, Hwang J, Lepak LA, et al. (2012) Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer. Nanotechnology. 23: 335202 |
| Kim M, Sundararaman R, Tiwari S, et al. (2012) Charge trapping devices using a bilayer oxide structure. Journal of Nanoscience and Nanotechnology. 12: 423-7 |
| Kim M, Hwang J, Shields VB, et al. (2012) SiC surface orientation and Si loss rate effects on epitaxial graphene. Nanoscale Research Letters. 7: 186 |