Karl Lark-Horovitz

Affiliations: 
Purdue University, West Lafayette, IN, United States 
Area:
semiconductors
Website:
http://www.physics.purdue.edu/prizes_awards/horovitz.shtml
Google:
"Karl Lark-Horovitz"
Mean distance: 10.69
 
SNBCP

Parents

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Franz Serafin Exner grad student 1919 University of Vienna
 (Die geschichtliche Entwicklung des physikalischen Relativitätsgedankens)

Children

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Seymour Benzer grad student 1947 Purdue (FlyTree)
Hellmut Fritzsche grad student 1954 Purdue
George J. Goldsmith grad student 1954 Purdue
James W. Mayer grad student 1959 Purdue
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Publications

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Fritzsche H, Lark-Horovitz K. (1959) Effect of minority impurities on impurity conduction in p-type germanium Physical Review. 113: 999-1001
Longo TA, Ray RK, Lark-Horovitz K. (1959) Low temperature impurity conduction in silicon Journal of Physics and Chemistry of Solids. 8: 259-261
Stöckmann F, Klontz EE, Mackay J, et al. (1958) Zur Photoleitung von Germanium nach Bestrahlung mit schnellen Elektronen Zeitschrift FüR Physik. 153: 331-337
Epstein AS, Fritzsche H, Lark-Horovitz K. (1957) Electrical properties of tellurium at the melting point and in the liquid state Physical Review. 107: 412-419
Johnson VA, Lark-Horovitz K. (1957) Chapter VII Semiconductors at Low Temperatures* Progress in Low Temperature Physics. 2: 187-225
Fritzsche H, Lark-Horovitz K. (1955) Electrical properties of p-type indium antimonide at low temperatures Physical Review. 99: 400-405
Fan HY, Kaiser W, Klontz EE, et al. (1954) Energy levels and photoconductivity in electron-bombarded germanium [3] Physical Review. 95: 1087-1088
Fritzsche H, Lark-Horovitz K. (1954) The electrical properties of germanium semiconductors at low temperatures Physica. 20: 834-844
Johnson VA, Lark-Horovitz K. (1953) Theory of thermoelectric power in semiconductors with applications to germanium Physical Review. 92: 226-232
Keesom PH, Lark-Horovitz K, Pearlman N. (1952) The effect of neutron bombardment on the low temperature atomic heat of silicon Science. 116: 630-631
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