Tyler J. Eustis, Ph.D.
Affiliations: | 2004 | Cornell University, Ithaca, NY, United States |
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Parents
Sign in to add mentor| John Silcox | grad student | 2004 | Cornell | |
| (MBE growth and scanning transmission electron microscopy characterization of group III nitride compound semiconductor thin films.) | ||||
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| Jiang N, Eustis TJ, Cai J, et al. (2002) Polarity determination by atomic location by channeling-enhanced microanalysis Applied Physics Letters. 80: 389-391 |
| Eustis TJ, Silcox J, Murphy MJ, et al. (2000) Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT Mrs Internet Journal of Nitride Semiconductor Research. 5: 188-194 |
| Schaff WJ, Wu H, Praharaj CJ, et al. (2000) GaN/SiC heterojunction bipolar transistors Solid-State Electronics. 44: 259-264 |
| Murphy MJ, Foutz BE, Chu K, et al. (1999) Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 840-845 |
| Eustis TJ, Silcox J, Murphy MJ, et al. (1999) Evidence from EELS of Oxygen in the Nucleation Layer of a MBE grown III-N HEMT Mrs Proceedings. 595 |
| Murphy MJ, Chu K, Wu H, et al. (1999) Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B. 17: 1252-1254 |
| Murphy MJ, Chu K, Wu H, et al. (1999) High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 75: 3653-3655 |
| Murphy MJ, Foutz BE, Chu K, et al. (1998) Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Proceedings. 537 |