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Leonid Chernyak

Affiliations: 
University of Central Florida, Orlando, FL, United States 
Area:
Condensed Matter Physics
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"Leonid Chernyak"
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William C. Burdett grad student 2004 University of Central Florida
Olena L. Tirpak grad student 2007 University of Central Florida

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Modak S, Chernyak L, Khodorov S, et al. (2020) Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers Ecs Journal of Solid State Science and Technology. 9: 45018
Modak S, Chernyak L, Xian M, et al. (2020) Impact of electron injection on carrier transport and recombination in unintentionally doped GaN Journal of Applied Physics. 128: 85702
Dzundza B, Nykyruy L, Parashchuk T, et al. (2020) Transport and thermoelectric performance of n-type PbTe films Physica B-Condensed Matter. 588: 412178
Modak S, Chernyak L, Khodorov S, et al. (2019) Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers Ecs Journal of Solid State Science and Technology. 8: Q3050-Q3053
Modak S, Lee J, Chernyak L, et al. (2019) Electron injection-induced effects in Si-doped β-Ga2O3 Aip Advances. 9: 015127
Yang J, Chen Z, Ren F, et al. (2018) 10 MeV proton damage in β-Ga2O3 Schottky rectifiers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 011206
Lee J, Fredricksen CJ, Flitsiyan E, et al. (2018) Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices Journal of Applied Physics. 123: 235104
Lee J, Flitsiyan E, Chernyak L, et al. (2018) Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length Applied Physics Letters. 112: 082104
Lee J, Flitsiyan E, Chernyak L, et al. (2017) Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors Ecs Journal of Solid State Science and Technology. 6
Yang J, Ren F, Khanna R, et al. (2017) Annealing of dry etch damage in metallized and bare (-201) Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 51201
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