Andrei Sirenko
Affiliations: | New Jersey Institute of Technology, Newark, NJ, United States |
Area:
Condensed Matter Physics, Materials Science Engineering, Inorganic ChemistryGoogle:
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Publications
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Miao L, Xin Y, Liu J, et al. (2019) Thin-film growth and structural characterization of a novel layered iridate Ba7Ir3O13+δ Semiconductor Science and Technology. 34: 25002 |
Luo X, Oh YS, Sirenko A, et al. (2012) High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap Applied Physics Letters. 100: 172112 |
Kang TD, Sirenko A, Park J, et al. (2011) Investigation of the Structural and Optical Properties of Ge-doped SbTe Films with Various Sb:Te Ratios Journal of the Electrochemical Society. 158: H249 |
Park S, Horibe Y, Asada T, et al. (2008) Highly aligned epitaxial nanorods with a checkerboard pattern in oxide films. Nano Letters. 8: 720-4 |
Gautier S, Sartel C, Ould-Saad S, et al. (2007) GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3 Journal of Crystal Growth. 298: 428-432 |
Sartel C, Gautier S, Hamady SOS, et al. (2006) Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen Superlattices and Microstructures. 40: 476-482 |
Konyashin I, Khvostov V, Babaev V, et al. (2006) A new hard allotropic form of carbon: Dream or reality? International Journal of Refractory Metals & Hard Materials. 24: 17-23 |
Kazimirov A, Bilderback DH, Huang R, et al. (2004) Microbeam high-resolution diffraction and x-ray standing wave methods applied to semiconductor structures Journal of Physics D. 37 |
Sirenko AA, Bernhard C, Golnik A, et al. (2000) Soft-mode hardening in SrTiO3 thin films Nature. 404: 373-6 |