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Daniel M. Fleetwood

Affiliations: 
Vanderbilt University, Nashville, TN 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
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"Daniel Fleetwood"
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Children

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James A. Felix grad student 2003 Vanderbilt
Xing Zhou grad student 2006 Vanderbilt
Sarah A. Francis grad student 2011 Vanderbilt

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Publications

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Zhou Y, Lv D, Bi D, et al. (2022) Radiation-hardened silicon photonic passive devices on a 3 µm waveguide platform under gamma and proton irradiation. Optics Express. 30: 16921-16930
Zhou Y, Bi D, Wang S, et al. (2022) High energy irradiation effects on silicon photonic passive devices. Optics Express. 30: 4017-4027
Bonaldo S, Mattiazzo S, Enz C, et al. (2020) Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses Ieee Transactions On Nuclear Science. 67: 1302-1311
Fleetwood DM. (2020) Total-Ionizing-Dose Effects, Border Traps, and 1/ f Noise in Emerging MOS Technologies Ieee Transactions On Nuclear Science. 67: 1216-1240
Gorchichko M, Cao Y, Zhang EX, et al. (2020) Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics Ieee Transactions On Nuclear Science. 67: 245-252
Bonaldo S, Putcha V, Linten D, et al. (2020) Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics Ieee Transactions On Nuclear Science. 67: 210-220
Chen L, Jin N, Yan D, et al. (2020) Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations Ieee Transactions On Electron Devices. 67: 841-846
Wang PF, Li X, Zhang EX, et al. (2020) Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 20: 420-428
Toguchi S, Zhang EX, Gorchichko M, et al. (2020) Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs Ieee Electron Device Letters. 41: 637-640
Ge H, Zhang EX, Chen J, et al. (2020) Comparing the TID-induced RF performance degradation of floating body and body contacted 130 nm SOI NMOS transistors Microelectronics Reliability. 104: 113547
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