Pragya R. Shrestha, Ph.D.
Affiliations: | 2013 | Old Dominion University, Norfolk, VA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Pragya Shrestha"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Helmut Baumgart | grad student | 2013 | Old Dominion University | |
| (Fast transients in non-volatile resistive memories (RRAM) using tantalum pentoxide as solid electrolyte.) | ||||
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Publications
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| McCrory DJ, Anders MA, Ryan JT, et al. (2019) Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station. The Review of Scientific Instruments. 90: 014708 |
| McCrory DJ, Anders MA, Ryan JT, et al. (2018) Wafer-Level Electrically Detected Magnetic Resonance: Magnetic Resonance in a Probing Station. Ieee Transactions On Device and Materials Reliability : a Publication of the Ieee Electron Devices Society and the Ieee Reliability Society. 18 |
| Shrestha PR, Nminibapiel DM, Campbell JP, et al. (2018) Analysis and Control of RRAM Overshoot Current Ieee Transactions On Electron Devices. 65: 108-114 |
| Shrestha P, Nminibapiel D, Veksler D, et al. (2018) Parasitic engineering for RRAM control Solid-State Electronics. 150: 41-44 |
| Nminibapiel DM, Veksler D, Kim JH, et al. (2017) Impact of RRAM Read Fluctuations on the Program-Verify Approach. Ieee Electron Device Letters : a Publication of the Ieee Electron Devices Society. 38: 736-739 |
| Nminibapiel DM, Veksler D, Shrestha PR, et al. (2017) Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling Ieee Electron Device Letters. 38: 326-329 |
| Bersuker G, Veksler D, Nminibapiel DM, et al. (2017) Toward reliable RRAM performance: macro- and micro-analysis of operation processes Journal of Computational Electronics. 16: 1085-1094 |
| Georgiou V, Veksler D, Ryan JT, et al. (2017) Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature Advanced Functional Materials. 28: 1704165 |
| Shrestha PR, Cheung KP, Campbell JP, et al. (2014) Accurate Fast capacitance measurements for reliable device characterization Ieee Transactions On Electron Devices. 61: 2509-2514 |
| Shrestha P, Ochia A, Cheung KP, et al. (2012) High-Speed Endurance and Switching Measurements for Memristive Switches Electrochemical and Solid-State Letters. 15: H173 |