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C. Barry Carter grad student 1991 Cornell (E-Tree)
 (Growth and structural characterization of novel semiconductor heterostructures.)
Lester F. Eastman grad student 1991 Cornell
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Zhu JG, Palmstrom CJ, Carter CB. (1995) Lattice matched GaAs/Sc0.3Er0.7As/GaAs heterostructures grown on various substrate orientations Journal of Applied Physics. 77: 4321-4328
Zhu JG, Palmstrom CJ, Carter CB. (1995) Study of molecular-beam epitactic growth of GaAs on (100) Sc xE1-xAs/GaAs Journal of Applied Physics. 77: 4312-4320
Finstad TG, Palmstrøm CJ, Mounier S, et al. (1990) Initial Stages of Gaas Growth on Sc l-X Er x as Surfaces Mrs Proceedings. 202: 413
Zhu JG, Palmstrdøm CJ, Carter CB. (1990) Defects in Mbe-Grown GaAs/Sc x Er 1–x As/GaAs Layers Mrs Proceedings. 198: 177
Zhu JG, Carter CB, Palmstrom CJ. (1990) Misfit Dislocations at Mismatched Epitactic Heterojunctions Mrs Proceedings. 198
PalmstrØM CJ, Harbison JP, Sands T, et al. (1990) Buried Metal/III-V Semiconductor Heteroepitaxy: Approaches to Lattice Matching Mrs Proceedings. 198: 153
Zhu JG, Carter CB. (1990) 60° dislocations in (001) GaAs/Si interfaces Philosophical Magazine. 62: 319-328
Zhu JG, Carter CB, Palmstrøm CJ, et al. (1990) Microstructure of epitactically grown GaAs/ErAs/GaAs Applied Physics Letters. 56: 1323-1325
Zhu JG, Palmstrøm CJ, Mounier S, et al. (1989) Characterization of ErAs/GaAs and GaAs/ErAs/GaAs Structures Mrs Proceedings. 160: 325
Zhu JG, McKeman S, Palmstrøm CJ, et al. (1989) High-Resolution Imaging of Coga/GaAs and Eras/GaAs Interfaces Mrs Proceedings. 159
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