Olof C. Hellman
Affiliations: | 1987-1991 | Materials Science And Engineering | Massachusetts Institute of Technology, Cambridge, MA, United States |
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| Hellman O. (1994) Buried reconstruction inhibition of solid phase epitaxy of Ge on Si (111) Journal of Vacuum Science and Technology. 12: 2825-2829 |
| Hellman OC, Herbots N, Vancauwenberghe O, et al. (1992) Microstructure and stoichiometry dependence of ion beam nitrides as a function of energy and temperature: A comparative study between Si and SiGe Journal of Vacuum Science and Technology. 10: 1631-1636 |
| Vancauwenberghe O, Herbots N, Hellman OC. (1992) Role of ion energy in ion beam oxidation of semiconductors: Experimental study and model Journal of Vacuum Science and Technology. 10: 713-718 |
| Vancauwenberghe O, Hellman OC, Herbots H, et al. (1992) Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and Si |
| Hellman OC, Vancauwenberghe O, Herbots N, et al. (1992) Structure and properties of silicon nitride and SixGe1−x nitride prepared by direct low energy ion beam nitridation Materials Science and Engineering B-Advanced Functional Solid-State Materials. 12: 53-59 |
| Vancauwenberghe O, Herbots N, Hellman OC. (1991) A quantitative model of point defect diffusivity and recombination in ion beam deposition and combined ion and molecular deposition Journal of Vacuum Science & Technology B. 9: 2027-2033 |
| Vancauwenberghe O, Hellman OC, Herbots N, et al. (1991) New SiGe dielectrics grown at room temperature by low‐energy ion beam oxidation and nitridation Applied Physics Letters. 59: 2031-2033 |