Brian D. Thoms, Ph.D.
Affiliations: | Physics | Cornell University, Ithaca, NY, United States |
Area:
Surface ScienceGoogle:
"Brian Thoms"Mean distance: 14.9 | S | N | B | C | P |
Children
Sign in to add trainee| Rudra P. Bhatta | grad student | 2008 | Georgia State |
| Ananta Acharya | grad student | 2013 | Georgia State |
| Christopher A. Oakley | grad student | 2009-2013 | Georgia State |
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Publications
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| Acharya AR, Thoms BD, Nepal N, et al. (2015) Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33 |
| Acharya AR, Gamage S, Senevirathna MKI, et al. (2013) Thermal stability of InN epilayers grown by high pressure chemical vapor deposition Applied Surface Science. 268: 1-5 |
| Acharya AR, Thoms BD. (2012) Compositional, Structural, and Optical Characterizations of In1-XGaxN Epilayers Grown by High Pressure Chemical Vapor Deposition The Himalayan Physics. 3: 6-9 |
| Acharya AR, Thoms BD. (2011) Study of InN surface by high resolution electron energy loss spectroscopy (HREELS ) The Himalayan Physics. 2: 35-37 |
| Acharya AR, Buegler M, Atalay R, et al. (2011) Observation of NH2 species on tilted InN (01 1̄ 1) facets Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29 |
| Bhatta RP, Thoms BD, Alevli M, et al. (2008) Desorption of hydrogen from InN(0 0 0 over(1, ̄)) observed by HREELS Surface Science. 602: 1428-1432 |
| Bhatta RP, Thoms BD, Weerasekera A, et al. (2007) Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 967-970 |
| Bhatta RP, Thoms BD, Alevli M, et al. (2007) Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition Surface Science. 601: L120-L123 |
| Bhatta RP, Thoms BD, Alevli M, et al. (2006) Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition Applied Physics Letters. 88 |
| Eddy CR, Leonhardt D, Shamamian VA, et al. (2003) Mass spectrometry sampling method for characterizing high-density plasma etching mechanisms Applied Physics Letters. 82: 3626-3628 |