Stefano Ossicini, PhD.

Physics University of Modena and Reggio Emilia, Modena, Emilia-Romagna, Italy 
Theoretical Chemistry, Physics
"Stefano Ossicini"
Mean distance: 9.85
Cross-listing: Chemistry Tree

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Marri I, Grillo S, Amato M, et al. (2023) Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core-Shell Nanocrystals. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 127: 1209-1219
Marri I, Ossicini S. (2021) Multiple exciton generation in isolated and interacting silicon nanocrystals. Nanoscale
Marri I, Amato M, Bertocchi M, et al. (2020) Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures. Physical Chemistry Chemical Physics : Pccp
Ossicini S, Marri I, Amato M, et al. (2020) Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. Faraday Discussions
Amato M, Ossicini S, Canadell E, et al. (2019) Preferential positioning, stability and segregation of dopants in hexagonal Si nanowires. Nano Letters
Marri I, Ossicini S. (2018) First-principle investigations of carrier multiplication in Si nanocrystals: A short review Arxiv: Materials Science. 1990: 20002
Marri I, Amato M, Guerra R, et al. (2018) First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications Physica Status Solidi (B). 255: 1700627
Bertocchi M, Degoli E, Véniard V, et al. (2017) Second Harmonic Generation in Silicon Based Heterostructures: The Role of Strain and Symmetry Nanoscience and Nanotechnology Letters. 9: 1102-1107
Marri I, Degoli E, Ossicini S. (2017) Doped and codoped silicon nanocrystals: The role of surfaces and interfaces Progress in Surface Science. 92: 375-408
Marri I, Degoli E, Ossicini S. (2017) First Principle Studies of B and P Doped Si Nanocrystals Physica Status Solidi (a). 215: 1700414
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