Mahmoud M. Asmar
Affiliations: | The University of Alabama, Tuscaloosa, AL | ||
| 2015 | Physics and Astronomy | Ohio University, Athens, OH, United States |
Google:
"Mahmoud M. Asmar"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Sergio Eduardo Ulloa | grad student | 2015 | Ohio University |
| Wang-Kong Tse | post-doc | 2018- | University of Alabama |
| Daniel E. Sheehy | post-doc | 2015-2018 | Louisiana State |
| Ilya Vekhter | post-doc | 2015-2018 | Louisiana State |
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Asmar MM, Tse WK. (2022) Impurity Screening and Friedel Oscillations in Floquet-driven Two-dimensional Metals. Journal of Physics. Condensed Matter : An Institute of Physics Journal |
| Jiang Y, Asmar MM, Han X, et al. (2020) Electron-Hole Asymmetry of Surface States in Topological Insulator SbTe Thin Films Revealed by Magneto-Infrared Spectroscopy. Nano Letters |
| Ke M, Asmar MM, Tse W. (2020) Nonequilibrium RKKY interaction in irradiated graphene Physical Review Research. 2 |
| Asmar MM, Tse W. (2019) Interlayer RKKY coupling in bulk Rashba semiconductors under topological phase transition Physical Review B. 100 |
| Alsharari AM, Asmar MM, Ulloa SE. (2018) Topological phases and twisting of graphene on a dichalcogenide monolayer Physical Review B. 98 |
| Alspaugh DJ, Asmar MM, Sheehy DE, et al. (2018) Proximity-induced superconductivity at nonhelical topological insulator interfaces Physical Review B. 98 |
| Alsharari AM, Asmar MM, Ulloa SE. (2018) Proximity-induced topological phases in bilayer graphene Physical Review B. 97 |
| Asmar MM, Sheehy DE, Vekhter I. (2018) Topological phases of topological-insulator thin films Physical Review B. 97 |
| Asmar MM, Ulloa SE. (2017) Minimal geometry for valley filtering in graphene Physical Review B. 96 |
| Asmar MM, Sheehy DE, Vekhter I. (2017) Interface symmetry and spin control in topological-insulator–semiconductor heterostructures Physical Review B. 95 |