Masahiro Watanabe, Ph.D.
Affiliations: | 2001 | Colorado State University, Fort Collins, CO |
Area:
Electronics and Electrical Engineering, Fluid and Plasma PhysicsGoogle:
"Masahiro Watanabe"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| George J. Collins | grad student | 2001 | Colorado State | |
| (Comparing the roles of inductive and capacitive coupling in a planar inductively coupled plasma through both theory and experiment.) | ||||
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Publications
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| Kumagai Y, Fukuyama S, Tonegawa H, et al. (2020) Negative differential resistance of CaF2/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process Japanese Journal of Applied Physics. 59 |
| Takeuchi K, Fukui M, Saraya T, et al. (2020) Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs Ieee Transactions On Semiconductor Manufacturing. 33: 159-165 |
| Kuwata Y, Suda K, Watanabe M. (2016) Resistance switching memory characteristics of CaF2/Si/CaF2 resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers Applied Physics Express. 9: 74001 |
| Suda K, Kuwata Y, Watanabe M. (2015) Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF2/CdF2/Si multilayered heterostructures grown on Si Japanese Journal of Applied Physics. 54 |
| Denda J, Uryu K, Suda K, et al. (2014) Resistance switching memory characteristics of Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well structures Applied Physics Express. 7: 44103 |
| Denda J, Uryu K, Watanabe M. (2013) Resistance Switching Memory Characteristics of Si/CaF2/CdF2Quantum-Well Structures Grown on Metal (CoSi2) Layer Japanese Journal of Applied Physics. 52 |
| Kanazawa T, Morosawa A, Fujii R, et al. (2007) Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy Japanese Journal of Applied Physics. 46: 3388-3390 |
| Kanazawa T, Fujii R, Wada T, et al. (2007) Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates Applied Physics Letters. 90: 92101 |
| Jinen K, Uchida K, Kodaira S, et al. (2006) Improvement of electroluminescence from CdF2/CaF2 intersubband transition light-emitting structure by trench patterning and hydrogen annealing of Si substrate Ieice Electronics Express. 3: 493-498 |
| Jinen K, Kikuchi T, Watanabe M, et al. (2006) Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-Subband Quantum Cascade Structure on Si substrate Japanese Journal of Applied Physics. 45: 3656-3658 |