David Adler
Affiliations: | 1965-1987 | Electrical engineering | Massachusetts Institute of Technology, Cambridge, MA, United States |
Website:
https://doi.org/10.1016/S0022-3093(87)80251-XGoogle:
"David Adler"Bio:
(1935 - 1987)
DOI: 10.1063/1.2811333
https://projects.iq.harvard.edu/files/PhD1954-1970.pdf
DOI: 10.1103/PhysRev.155.826
Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Harvey Brooks | grad student | 1965 | Harvard | |
| (Theory of Semiconductor-to-Metal Transitions) | ||||
Children
Sign in to add trainee| Michel Meunier | grad student | MIT and Harvard | |
| Donnie K. Reinhard | grad student | 1973 | MIT (E-Tree) |
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Publications
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| Wang X, Bar-Yam Y, Adler D, et al. (2019) dc conductivity and the Meyer-Neldel rule in a-Si:H. Physical Review. B, Condensed Matter. 38: 1601-1604 |
| Branz HM, Silver M, Adler D. (1988) Sweep-out experiments: A new spectroscopy for the electronic density of states in doped semiconductors Philosophical Magazine Part B. 57: 271-282 |
| Lo CF, Johnson KH, Adler D. (1988) Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method Journal of Non-Crystalline Solids. 99: 97-103 |
| Hsiaw HC, Johnson KH, Lo CF, et al. (1988) Valence and conduction band molecular-orbital topologies and the optical and electrical properties of gallium arsenide and silicon Journal of Non-Crystalline Solids. 105: 101-106 |
| Branz HM, Capuder K, Lyons EH, et al. (1987) Conductivity and quenched-in defects in hydrogenated amorphous silicon. Physical Review. B, Condensed Matter. 36: 7934-7940 |
| Bar-Yam Y, Adler D, Joannopoulos JD. (1987) Electronic States in Amorphous Solids, Liquids, and Alloys Mrs Proceedings. 95: 3 |
| Tokuda KL, Adler D, Reif R. (1987) Preparation and Properties of Hydrogenated Amorphous Silicon Produced by Plasma-Enhanced Chemical Vapor Decomposition of Silane Mrs Proceedings. 95: 255 |
| Silver M, Branz HM, Adler D. (1987) Theoretical Analysis of Sweep-Out Experiments in Doped Hydrogenated Amorphous Silicon Films Mrs Proceedings. 95 |
| Adler D, Silver M. (1987) Microscopic mobility in hydrogenated amorphous silicon Philosophical Magazine Letters. 56: 113-119 |
| Branz HM, Flint JH, Harris CJ, et al. (1987) Incorporation of boron during thermal chemical vapor deposition of doped hydrogenated amorphous silicon Applied Physics Letters. 51: 922-924 |