Huaqiang Wu, Ph.D.
Affiliations: | 2006 | Cornell University, Ithaca, NY, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Huaqiang Wu"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Michael G Spencer | grad student | 2006 | Cornell | |
| (Bulk gallium nitride crystal growth and characterizations and high purity gallium nitride powder synthesis and applications.) | ||||
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Publications
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| He C, Tang J, Shang DS, et al. (2020) Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing. Acs Applied Materials & Interfaces |
| Yao P, Wu H, Gao B, et al. (2020) Fully hardware-implemented memristor convolutional neural network. Nature. 577: 641-646 |
| Wang Z, Wu H, Burr GW, et al. (2020) Resistive switching materials for information processing Nature Reviews Materials. 5: 173-195 |
| Tang J, Yuan F, Shen X, et al. (2019) Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges. Advanced Materials (Deerfield Beach, Fla.). e1902761 |
| Guo Y, Wu H, Gao B, et al. (2019) Unsupervised Learning on Resistive Memory Array Based Spiking Neural Networks. Frontiers in Neuroscience. 13: 812 |
| Sun W, Gao B, Chi M, et al. (2019) Understanding memristive switching via in situ characterization and device modeling. Nature Communications. 10: 3453 |
| Hua Q, Wu H, Gao B, et al. (2019) A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X-Point Memory Applications. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 6: 1900024 |
| Wang P, Xu F, Wang B, et al. (2019) Three-Dimensional nand Flash for Vector–Matrix Multiplication Ieee Transactions On Very Large Scale Integration Systems. 27: 988-991 |
| Islam R, Li H, Chen P, et al. (2019) Device and materials requirements for neuromorphic computing Journal of Physics D: Applied Physics. 52: 113001 |
| Huang Y, Zhao Z, Wang C, et al. (2019) Conductive metallic filaments dominate in hybrid perovskite-based memory devices Science China. Materials. 62: 1323-1331 |