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Rauf Adilovich Suleymanov, PhD, Habil.

Affiliations: 
1967-1972 Physics Erevan State University 
 1972-1976 Physics Azerbaijan Academy of Sciences 
Area:
Solid State Physics, Semiconductor Optics, Semiconductor Devices
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"Rauf Suleymanov"
Bio:

Rauf A. Suleymanov was born in Baku in 1949, grow up in Erevan, where he completed his BSc and Ms degrees, which were merged at that time in a five-year educational period. Then, he moved to Baku, Azerbaijan for his graduate studies under the supervision of Prof. Gregory Belenky who is presently working in Stony Brook University, Electrical and Computer Engineering as head of Optoelectronics group.
Prof. Suleymanov educated plenty of students in Azerbaijan until the collapse of Soviet Union. In this period he moved to Turkey and worked in Middle East Technical University Physics Department between 1993-1996. In his second move to Turkey he worked in Gebze Institute of Technology (after 2015 Gebze Technical University) Physics Department until December 2016, i.e. his retirement. After that he started to work at International Antalya Bilim University Electronics Engineering Department.
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Parents

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Gregory Belenky grad student 1972-1976 Azerbaijan Academy of Sciences (E-Tree)

Children

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Muharram Zarbaliyev grad student 1991 Azerbaijan Academy of Sciences
MirHasan Yu. Seyidov grad student 1992 Azerbaijan Academy of Sciences
Yakup Bakış grad student 2011 Gebze Technical University
Emin Yakar grad student 2012 Gebze Technical University
Ertan Balaban grad student 2014 Gebze Technical University
Yasin Şale grad student 2007-2016 Gebze Technical University (E-Tree)

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Publications

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Seyidov MY, Suleymanov RA, Şale Y, et al. (2018) Diode Polarization and Resistive Switching in Metal/TlGaSe 2 Semiconductor/Metal Devices Semiconductors. 52: 2007-2016
Seyidov MY, Mikailzade FA, Suleymanov RA, et al. (2017) Polarization switching in undoped and La-doped TlInS2 ferroelectric-semiconductors Physica B-Condensed Matter. 526: 45-53
Seyidov MY, Suleymanov RA, Odrinsky AP, et al. (2016) Effect of deep native defects on ultrasound propagation in TlInS2 layered crystal Physica B-Condensed Matter. 497: 86-92
Seyidov МY, Suleymanov RA, Şale Y. (2016) Defects forming the optical absorption edge in TlGaSe2 layered crystal Journal of Physics and Chemistry of Solids. 96: 17-21
Seyidov MY, Mikailzade FA, Suleymanov RA, et al. (2016) The influence of uniaxial compressive stress on the phase transitions and dielectric properties of NaNO 2 Journal of Physics and Chemistry of Solids. 93: 22-26
Seyidov MY, Suleymanov RA, Balaban E, et al. (2015) Enhancing the photoresponse of a TlGaSe2 semiconductor for ultraviolet detection applications Physica Scripta. 90
Seyidov MY, Suleymanov RA, Balaban E, et al. (2015) Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric-Semiconductor Ferroelectrics. 481: 77-88
Seyidov MY, Suleymanov RA, Åale Y, et al. (2014) Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe2 layered semiconductor Journal of Applied Physics. 116
Seyidov MY, Suleymanov RA, Balaban E, et al. (2014) Field induced rectification and memristive behavior of TlGaSe2 layered semiconductor Applied Physics Letters. 105
Seyidov M, Suleymanov RA, Balaban E, et al. (2014) Switching phenomenon in TlGaSe2 layered semiconductor Solid-State Electronics. 94: 39-43
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