Shenyuan Yang

Affiliations: 
Institute of Semiconductors, Chinese Academy of Sciences 
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"Shenyuan Yang"
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Liu B, Chen Q, Chen Z, et al. (2022) Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer. Nano Letters
Chang H, Chen Z, Liu B, et al. (2020) Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 2001272
Zhang X, Chen Z, Chang H, et al. (2020) Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. Journal of Visualized Experiments : Jove
Wang Y, Yang S, Chang H, et al. (2020) Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering Applied Surface Science. 520: 146358
Chen Z, Chang H, Cheng T, et al. (2020) Nanopatterned Graphene: Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes (Adv. Funct. Mater. 31/2020) Advanced Functional Materials. 30: 2070209
Chen Z, Chang H, Cheng T, et al. (2020) Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes Advanced Functional Materials. 30: 2001483
Dou Z, Chen Z, Li N, et al. (2019) Atomic mechanism of strong interactions at the graphene/sapphire interface. Nature Communications. 10: 5013
Zhou Q, Cho Y, Yang S, et al. (2019) Large Band Edge Tunability in Colloidal Nanoplatelets. Nano Letters
Chen Z, Liu Z, Wei T, et al. (2019) Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. Advanced Materials (Deerfield Beach, Fla.). e1807345
Chang H, Chen Z, Li W, et al. (2019) Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate Applied Physics Letters. 114: 091107
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