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Gerald Lucovsky

Affiliations: 
Physics North Carolina State University, Raleigh, NC 
Area:
ultra-thin Si oxyitride devices
Website:
http://www.physics.ncsu.edu/people/faculty_lucovsky.php
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"Gerald Lucovsky"
Bio:

http://adsabs.harvard.edu/abs/1960PhDT........18L
http://dx.doi.org/10.1063/1.1735750

Mean distance: 8.87
 		SNBCP
Cross-listing: Chemistry Tree

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Parents

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Elmer L. Offenbacher grad student 1960 Temple University
 (Photoeffects in Nonuniformly Irradiated p-n Junctions)

Children

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Gregory N. Parsons grad student 1990 NCSU (Chemistry Tree)
Gilbert B. Rayner grad student 2002 NCSU (Chemistry Tree)
Choelhwyi Bae grad student 2003 NCSU (Chemistry Tree)
Yi-Mu Lee grad student 2003 NCSU (Chemistry Tree)
Joon G. Hong grad student 2004 NCSU (Chemistry Tree)
Charles C. Fulton grad student 2005 NCSU (Chemistry Tree)
Christopher L. Hinkle grad student 2005 NCSU (Chemistry Tree)
Byongsun Ju grad student 2005 NCSU (Chemistry Tree)
Sanghyun Lee grad student 2007 NCSU (Chemistry Tree)
Joseph P. Long grad student 2008 NCSU (Chemistry Tree)
Hyungtak Seo grad student 2008 NCSU (Chemistry Tree)
Joseph S. Washington grad student 2010 NCSU (Chemistry Tree)
Jinwoo Kim grad student 2011 NCSU (Chemistry Tree)
Daniel J. Zeller grad student 2014 NCSU (Chemistry Tree)
Bruce J. Hinds post-doc 1996-1998 NCSU (Chemistry Tree)

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Publications

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Ives RL, Zeller D, Lucovsky G, et al. (2015) Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition Ieee Transactions On Plasma Science. 43: 2571-2580
Lucovsky G, Zeller DJ, Cheng C, et al. (2014) Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices Surface and Coatings Technology. 242: 183-186
Lucovsky G, Parsons G, Zeller D, et al. (2013) Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon Japanese Journal of Applied Physics. 52
Lucovsky G. (2013) Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2and GeO2 Japanese Journal of Applied Physics. 52
Lucovsky G, Kim J. (2013) Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 ≥ n > 3, and TiO 2-HfO2 alloys Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31
Lucovsky G, Kim J, Wu K, et al. (2013) Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31
Lucovsky G. (2013) Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2and GeO2 Solid-State Electronics. 83: 30-36
Lucovsky G, Kim J, Wu K, et al. (2013) Non-crystalline SiO2: Processing induced pre-Existing defects associated with vacated O-atom intrinsic bonding sites Physics Procedia. 44: 99-107
Lucovsky G, Parsons G, Zeller D, et al. (2013) Spectroscopic detection of medium range order in hydrogenated amorphous silicon, a-Si(H): Applications in photovolatics, thin film transistors and Si-based microelectronics Physics Procedia. 44: 91-98
Lucovsky G, Kim JW, Nordlund D. (2013) First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates Microelectronic Engineering. 109: 370-373
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