Elena Papadomanolaki
Affiliations: | 2017 | University of Crete, Greece |
Google:
"Elena Papadomanolaki"Mean distance: (not calculated yet)
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Kazazis SA, Papadomanolaki E, Iliopoulos E. (2020) Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties Journal of Applied Physics. 127: 225701 |
| Kazazis SA, Papadomanolaki E, Iliopoulos E. (2018) Polarization-Engineered InGaN/GaN Solar Cells: Realistic Expectations for Single Heterojunctions Ieee Journal of Photovoltaics. 8: 118-124 |
| Dimitrakopulos GP, Bazioti C, Papadomanolaki E, et al. (2018) Evolution of stratification in high-alloy content InGaN epilayers grown on (0001) AlN Materials Science and Technology. 34: 1565-1574 |
| Kazazis SA, Papadomanolaki E, Androulidaki M, et al. (2018) Optical properties of InGaN thin films in the entire composition range Journal of Applied Physics. 123: 125101 |
| Kazazis SA, Papadomanolaki E, Androulidaki M, et al. (2016) Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates Thin Solid Films. 611: 46-51 |
| Papadomanolaki E, Bazioti C, Kazazis SA, et al. (2016) Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties Journal of Crystal Growth. 437: 20-25 |
| Bazioti C, Papadomanolaki E, Kehagias T, et al. (2015) Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy Journal of Applied Physics. 118 |
| Bazioti C, Papadomanolaki E, Kehagias T, et al. (2015) Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures Physica Status Solidi (B) Basic Research. 252: 1155-1162 |
| Dimitrakis P, Normand P, Bonafos C, et al. (2013) GaN quantum-dots integrated in the gate dielectric of metal-oxide- semiconductor structures for charge-storage applications Applied Physics Letters. 102 |