Kamaram Munira
Affiliations: | Electrical Engineering | University of Virginia, Charlottesville, VA |
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| Naghibolashrafi N, Hegde VI, Shambhu K, et al. (2020) Structural and magnetic analyses of the FexCo1−xTiSb alloy system: Fe0.5Co0.5TiSb as a prototypical half-Heusler compound Journal of Alloys and Compounds. 822: 153408 |
| Ma J, Hegde VI, Munira K, et al. (2017) Computational investigation of half-Heusler compounds for spintronics applications Physical Review B. 95 |
| Naghibolashrafi N, Keshavarz S, Hegde VI, et al. (2016) Synthesis and characterization of Fe-Ti-Sb intermetallic compounds: Discovery of a new Slater-Pauling phase Physical Review B - Condensed Matter and Materials Physics. 93 |
| Munira K, Pandey SC, Kula W, et al. (2016) Voltage-controlled magnetization switching in MRAMs in conjunction with spin-transfer torque and applied magnetic field Journal of Applied Physics. 120: 203902 |
| Azadani JG, Munira K, Romero J, et al. (2016) Anisotropy in layered half-metallic Heusler alloy superlattices Journal of Applied Physics. 119 |
| Munira K, Xie Y, Nadri S, et al. (2015) Reducing error rates in straintronic multiferroic nanomagnetic logic by pulse shaping. Nanotechnology. 26: 245202 |
| Salehi Fashami M, Munira K, Bandyopadhyay S, et al. (2015) Corrigendum to “Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic” [Nov 13 1206-1212] Ieee Transactions On Nanotechnology. 14: 196-197 |
| Munira K, Visscher PB. (2015) Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory Journal of Applied Physics. 117 |
| Munira K, Romero J, Butler WH. (2014) Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications Journal of Applied Physics. 115 |
| Fashami MS, Munira K, Bandyopadhyay S, et al. (2013) Switching of dipole coupled multiferroic nanomagnets in the presence of thermal noise: Reliability of nanomagnetic logic Ieee Transactions On Nanotechnology. 12: 1206-1212 |