Antonios Anagnostopoulos, Ph.D.

1980-2019 Department of Physics Aristotle University of Thessaloniki, Thessaloniki, Greece 
chaos theory, non-linear systems
"Antonios Anagnostopoulos"

Professor Antonios N. Anagnostopoulos was born in Thessaloniki, Greece. He received his Physics Diploma, from the Physics Department, Aristotle University of Thessaloniki, Greece in 1974. In 1978 he received his Doctorate from Fakultät fur Physik of the Technical University "Fridericiana", Karlsruhe, the Federal Republic of West Germany.

Prof. Anagnostopoulos has taught numerous topics on physics in the Physics Department of Aristotle University of Thessaloniki, Greece, from 1980 until 2019. During this period he has served successively, as a Lecturer, Assistant Professor, Assosciate Professor and, finally, full Professor. He has supervised numerous PhDs and Master Theses.

His research interests include, next to semiconductor physics and their electrical properties, non-linear dynamics, chaotic time series analysis, non-linear circuits and systems, as well as the chaotic behaviour of electronic circuits and their applications. He has also participated, as a leading researcher, in several national (Greek), European and internationally-funded projects, while he has coordinated more than 10 research projects.

Prof. Anagnostopoulos has authored or co-authored more than 150 journal and conference papers, including two review articles and a book chapter. He has also refereed papers in numerous journals and conferences. Finally, he has been a member of the Hellenic Physical Society, the Deutsche Physikalische Gesellschaft, the European Physical Society, the Deutsche Gesellschaft für Kristallwachstum and the American Physical Society.

From 2004, he had appointed as a Professor at Physics Department, Aristotle University of Thessaloniki.
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Paraskevopoulos KM, Hatzikraniotis E, Vinga ES, et al. (2009) n–p transformation in TlBi(1−x)SbxTe2 system Journal of Alloys and Compounds. 467: 65-71
Anagnostopoulos A, Bogevolnov V, Ivankiv I, et al. (2003) The electrophysical properties of the surface layer of the (TlBiSe2)1-x -(TlBiS2)x mixed crystals Chaos Solitons & Fractals. 17: 225-229
Özer M, Kalkan N, Kyritsi K, et al. (2002) The Influence of Tl4Bi2S5 Precipitates on the Crystalline TlBiS2 Properties Physica Status Solidi (a). 193: 3-11
Anagnostopoulos A, Bogevolnov VB, Ivankiv IM, et al. (2002) The Electrophysical Properties of the Surface Layer of the Semiconductor TlBiSe2 Physica Status Solidi B-Basic Solid State Physics. 231: 451-456
Marinova V, Shurulinkov S, Daviti M, et al. (2000) Refractive index measurements of mixed HgBrxI2−x single crystals Optical Materials. 14: 95-99
Moctar COE, Kambas K, Marsillac S, et al. (2000) Optical properties of CuAlX2 (X=Se, Te) thin films obtained by annealing of copper, aluminum and chalcogen layers sequentially deposited Thin Solid Films. 371: 195-200
Daviti M, Paraskevopoulos KM, Anagnostopoulos A, et al. (1996) Growth, optical and electrical characterization of HgBr1.16I0.84 single crystals Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 380: 62-65
Gallos L, Anagnostopoulos A, Argyrakis P. (1994) Conduction anisotropy in layered semiconductors Physical Review B. 50: 14643-14646
Hanias M, Anagnostopoulos A, Kambas K, et al. (1989) On the non-linear properties of TlInX2 (X = S, Se, Te) ternary compounds Physica B-Condensed Matter. 160: 154-160
Anagnostopoulos A, Kambas K, Spyridelis J. (1986) On the optical and electrical properties of the Zn3In2S6 layered compound Materials Research Bulletin. 21: 407-413
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