Martin Ahr
Affiliations: | Theoretical Physics | University of Würzburg, Würzburg, Bayern, Germany |
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| Volkmann T, Ahr M, Biehl M. (2004) Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy Physical Review B - Condensed Matter and Materials Physics. 69: 165303-1-165303-10 |
| Biehl M, Ahr M, Kinzel W, et al. (2003) Kinetic Monte Carlo simulations of heteroepitaxial growth Thin Solid Films. 428: 52-55 |
| Ahr M, Biehl M. (2002) Flat (001) surfaces of II–VI semiconductors: a lattice gas model Surface Science. 505: 124-136 |
| Much F, Ahr M, Biehl M, et al. (2002) A kinetic Monte Carlo method for the simulation of heteroepitaxial growth Computer Physics Communications. 147: 226-229 |
| Ahr M, Biehl M, Volkmann T. (2002) Modeling (001) surfaces of II–VI semiconductors Computer Physics Communications. 147: 107-110 |
| Biehl M, Ahr M, Kinzel W, et al. (2001) A lattice gas model of II-VI(001) semiconductor surfaces Europhysics Letters (Epl). 53: 169-175 |
| Biehl M, Ahr M, Kinne M, et al. (2001) Particle currents and the distribution of terrace sizes in unstable epitaxial growth Physical Review B. 64 |
| Ahr M, Biehl M. (2001) Modelling sublimation and atomic layer epitaxy in the presence of competing surface reconstructions Surface Science. 488: L553-L560 |
| Ahr M, Biehl M. (2000) Singularity spectra of rough growing surfaces from wavelet analysis Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics. 62: 1773-7 |
| Ahr M, Biehl M, Kinne M, et al. (2000) The influence of the crystal lattice on coarsening in unstable epitaxial growth Surface Science. 465: 339-346 |