Chris G. Van de Walle, Ph.D.
Affiliations: | 2004- | Materials Department | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Computational Physics, Computational Materials ScienceWebsite:
http://www.mrl.ucsb.edu/~vandewalle/Google:
"Chris Van de Walle"Bio:
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Parents
Sign in to add mentorRichard M. Martin | grad student | 1982-1986 | ||
(Richard Martin acted as my Ph.D. supervisor while he was at Xerox PARC.) | ||||
Sokrates T. Pantelides | post-doc | 1986-1988 | IBM |
Children
Sign in to add traineeQimin Yan | grad student | UC Santa Barbara | |
Justin R. Weber | grad student | 2005-2010 | UC Santa Barbara |
Joel B. Varley | grad student | 2005-2011 | UC Santa Barbara |
Emmanouil S. Kioupakis | post-doc | UC Santa Barbara | |
Minseok Choi | post-doc | 2011-2013 | UC Santa Barbara |
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Publications
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Zhao F, Turiansky ME, Alkauskas A, et al. (2023) Trap-Assisted Auger-Meitner Recombination from First Principles. Physical Review Letters. 131: 056402 |
Zhang X, Shen JX, Van de Walle CG. (2020) Anomalous Auger Recombination in PbSe. Physical Review Letters. 125: 037401 |
Turiansky ME, Alkauskas A, Bassett LC, et al. (2019) Dangling Bonds in Hexagonal Boron Nitride as Single-Photon Emitters. Physical Review Letters. 123: 127401 |
Zhao Y, Yan Q, Feezell D, et al. (2013) Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9 |
Alkauskas A, Lyons JL, Steiauf D, et al. (2012) First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO. Physical Review Letters. 109: 267401 |
Noffsinger J, Kioupakis E, Van de Walle CG, et al. (2012) Phonon-assisted optical absorption in silicon from first principles. Physical Review Letters. 108: 167402 |
Rinke P, Schleife A, Kioupakis E, et al. (2012) First-principles optical spectra for F centers in MgO. Physical Review Letters. 108: 126404 |
Moses PG, Miao M, Yan Q, et al. (2011) Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN. The Journal of Chemical Physics. 134: 084703 |
Rinke P, Janotti A, Scheffler M, et al. (2009) Defect formation energies without the band-gap problem: combining density-functional theory and the GW approach for the silicon self-interstitial. Physical Review Letters. 102: 026402 |
Singh AK, Janotti A, Scheffler M, et al. (2008) Sources of electrical conductivity in SnO2. Physical Review Letters. 101: 055502 |