Qin Zhang
Affiliations: | 2009 | Electrical Engineering | University of Notre Dame, Notre Dame, IN, United States |
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Publications
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Zhang Q, Lu Y, Richter CA, et al. (2014) Optimum bandgap and supply voltage in tunnel FETs Ieee Transactions On Electron Devices. 61: 2719-2724 |
Xu K, Zeng C, Zhang Q, et al. (2013) Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6 |
Yan R, Zhang Q, Kirillov OA, et al. (2013) Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Applied Physics Letters. 102 |
Zhang Q, Li R, Yan R, et al. (2013) A unique photoemission method to measure semiconductor heterojunction band offsets Applied Physics Letters. 102 |
Zhou G, Lu Y, Li R, et al. (2012) InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784 |
Lu Y, Zhou G, Li R, et al. (2012) Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Ieee Electron Device Letters. 33: 655-657 |
Li R, Lu Y, Zhou G, et al. (2012) AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365 |
Zhou G, Li R, Vasen T, et al. (2012) Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μa/μm at VDS = 0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 32.6.1-32.6.4 |
Jena D, Fang T, Zhang Q, et al. (2012) Response to "comment on 'Zener tunneling semiconducting nanotubes and graphene nanoribbon p-n junctions'" Applied Physics Letters. 101 |
Yan R, Zhang Q, Li W, et al. (2012) Determination of graphene work function and graphene-insulator- semiconductor band alignment by internal photoemission spectroscopy Applied Physics Letters. 101 |