Jeffrey Bokor

Affiliations: 
Electrical Engineering and Computer Sciences University of California, Berkeley, Berkeley, CA 
Area:
nanoscale science
Website:
http://www.eecs.berkeley.edu/Faculty/Homepages/bokor.html
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"Jeffrey Bokor"
Bio:

http://www.eecs.berkeley.edu/~jbokor/
http://searchworks.stanford.edu/view/809633
http://adsabs.harvard.edu//abs/1980PhDT........14B
http://www.eecs.berkeley.edu/~jbokor/index_files/fullvita.pdf
http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.120.3541&rep=rep1&type=pdf

Mean distance: 12.34
 

Parents

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Charles Kirkham Rhodes grad student 1980 Stanford
 (Multiquantum ultraviolet excitation of atoms and molecules.)

Children

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Kenneth A Goldberg grad student 1993-1997 UC Berkeley
Nen-Wen Pu grad student 2000 UC Berkeley
Jakub T. Kedzierski grad student 2001 UC Berkeley
Peiqi Xuan grad student 2003 UC Berkeley
Michael D. Shumway grad student 2004 UC Berkeley
Shiying Xiong grad student 2004 UC Berkeley
Noel Arellano grad student 2008 UC Berkeley
Yu-Chih Tseng grad student 2009 UC Berkeley
Cheuk C. Lo grad student 2011 UC Berkeley
Brian J. Lambson grad student 2013 UC Berkeley
Zheng Gu grad student 2014 UC Berkeley
Phil H. Bucksbaum post-doc 1981-1982 Bell Laboratories, Holmdel
Naomi J. Halas post-doc 1987-1989 Bell Laboratories, Holmdel
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Publications

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Xiao Z, Lo Conte R, Chen C, et al. (2018) Bi-directional coupling in strain-mediated multiferroic heterostructures with magnetic domains and domain wall motion. Scientific Reports. 8: 5207
Lo Conte R, Xiao Z, Chen C, et al. (2018) Influence of Non-Uniform Micron-Scale Strain Distributions on the Electrical Reorientation of Magnetic Micro-Structures in a Composite Multiferroic Heterostructure. Nano Letters
Llinas JP, Fairbrother A, Borin Barin G, et al. (2017) Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons. Nature Communications. 8: 633
Chen D, Chen Z, He Q, et al. (2016) Interface Engineering of Domain Structures in BiFeO3 Thin Films. Nano Letters
Desai SB, Madhvapathy SR, Sachid AB, et al. (2016) MoS2 transistors with 1-nanometer gate lengths. Science (New York, N.Y.). 354: 99-102
Hong J, Lambson B, Dhuey S, et al. (2016) Experimental test of Landauer's principle in single-bit operations on nanomagnetic memory bits. Science Advances. 2: e1501492
Gu Z, Nowakowski ME, Carlton DB, et al. (2015) Sub-nanosecond signal propagation in anisotropy-engineered nanomagnetic logic chains. Nature Communications. 6: 6466
You L, Lee O, Bhowmik D, et al. (2015) Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy Proceedings of the National Academy of Sciences of the United States of America. 112: 10310-10315
Pattabi A, Gu Z, Gorchon J, et al. (2015) Direct optical detection of current induced spin accumulation in metals by magnetization-induced second harmonic generation Applied Physics Letters. 107
Gu Z, Storz R, Marcus M, et al. (2015) Time-resolved photo-emission electron microscopy of nanomagnetic logic chains Springer Proceedings in Physics. 159: 281-283
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